GaAs detectors irradiated by electrons at different dose rates

Number of the records: 1

Title	GaAs detectors irradiated by electrons at different dose rates
Author	Šagátová A.
Co-authors	Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Sedláčková K.
	Pavlovič M.
	Fulop M.
	Boháček Pavol 1954 SAVELEK - Elektrotechnický ústav SAV
	Nečas V.

Source document	Journal of Instrumentation. Vol. 9 (2014), no. C12050
Language	eng - English
Document kind	rozpis článkov z periodík (rbx)
Citations	OZDEN, Selin - KOC, Mumin Mehmet. Wet-chemical etching of GaAs(211)B wafers for controlling the surface properties. In INTERNATIONAL JOURNAL OF SURFACE SCIENCE AND ENGINEERING. ISSN 1749-785X, 2019, vol. 13, no. 2-3, pp. 79-109.
	PENG, J.B. - ZOU, J.J. - TANG, B. - ZHU, Z.F. - CHEN, D.H. - DENG, W.J. - PENG, X.C. Effects of electron irradiation and thermal annealing on characteristics of semi -insulating gallium -arsenide alpha -particle detectors. In NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT. ISSN 0168-9002, JUL 21 2020, vol. 969.
Category	ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	2014
Registered in	WOS
Registered in	SCOPUS
Registered in	CCC
DOI	10.1088/1748-0221/9/12/C12050

article

	File name	Access	Size	Downloaded	Type	License
	GaAs detectors irradiated by electrons at different dose rates.pdf	Neprístupný/archív	705.7 KB	0	Publisher's version

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	A

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2014	2013	1.526	Q2	0.708	Q1

Number of the records: 1