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GaAs detectors irradiated by electrons at different dose rates
Title GaAs detectors irradiated by electrons at different dose rates Author Šagátová A. Co-authors Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV ORCID Sedláčková K. Pavlovič M. Fulop M. Boháček Pavol 1954 SAVELEK - Elektrotechnický ústav SAV Nečas V. Source document Journal of Instrumentation. Vol. 9 (2014), no. C12050 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations OZDEN, Selin - KOC, Mumin Mehmet. Wet-chemical etching of GaAs(211)B wafers for controlling the surface properties. In INTERNATIONAL JOURNAL OF SURFACE SCIENCE AND ENGINEERING. ISSN 1749-785X, 2019, vol. 13, no. 2-3, pp. 79-109. PENG, J.B. - ZOU, J.J. - TANG, B. - ZHU, Z.F. - CHEN, D.H. - DENG, W.J. - PENG, X.C. Effects of electron irradiation and thermal annealing on characteristics of semi -insulating gallium -arsenide alpha -particle detectors. In NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT. ISSN 0168-9002, JUL 21 2020, vol. 969. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2014 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1088/1748-0221/9/12/C12050 article
File name Access Size Downloaded Type License GaAs detectors irradiated by electrons at different dose rates.pdf Neprístupný/archív 705.7 KB 0 Publisher's version rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2014 2013 1.526 Q2 0.708 Q1
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