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Interface engineered HfO2-based 3D vertical ReRAM
Title Interface engineered HfO2-based 3D vertical ReRAM Author Hudec Boris ORCID Co-authors Wang I-T. Lai W.-L. Chang C.-C. Jančovič Peter 1990 SAVELEK - Elektrotechnický ústav SAV Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ORCID Mičušík Matej 1977- SAVPOLYM - Ústav polymérov SAV ORCID Omastová Mária 1962- SAVPOLYM - Ústav polymérov SAV ORCID Hou T.-H. Source document Journal of Physics D: Applied Physics. Vol. 49 (2016), no. 215102 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations WANG, Y.P. - DING, Z.J. - LIU, Q.X. - LIU, W.J. - DING, S.J. - ZHANG, D.W. Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors. In JOURNAL OF MATERIALS CHEMISTRY C. DEC 21 2016, vol. 4, no. 47, p. 11059-11066. BANERJEE, W. - LIU, M. In 2017 7TH INTERNATIONAL SYMPOSIUM ON EMBEDDED COMPUTING AND SYSTEM DESIGN (ISED). 2017. 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Predicting voltage induced positive-feedback effect on dynamic reset behavior in resistance switching device. In JOURNAL OF PHYSICS D-APPLIED PHYSICS. FEB 27 2019, vol. 52, no. 9. SHIMA, H. - TAKAHASHI, M. - NAITOH, Y. - AKINAGA, H. Electrode Material Dependence of Resistance Change Behavior in Ta2O5 Resistive Analog Neuromorphic Device. In IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2018, vol. 6, no. 1, p. 1220-1226. BANERJEE, Writam - LIU, Ming. Three-dimensional emerging nonvolatile memory for the high-density and neuromorphic applications. In 2017 7th International Symposium on Embedded Computing and System Design, ISED 2017, 2018-02-27, 2018-January, pp. 1-5. MUNJAL, S. - KHARE, N. Advances in resistive switching based memory devices. In JOURNAL OF PHYSICS D-APPLIED PHYSICS. ISSN 0022-3727, OCT 23 2019, vol. 52, no. 43. OU, Q.F. - XIONG, B.S. - YU, L. - WEN, J. - WANG, L. - TONG, Y. In-Memory Logic Operations and Neuromorphic Computing in Non-Volatile Random Access Memory. 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In-Memory Computation Based Mapping of Keccak-f Hash Function. In FRONTIERS IN NANOTECHNOLOGY. MAR 16 2022, vol. 4. Dostupné na: https://doi.org/10.3389/fnano.2022.841756. HUBBARD, W.A. - LODICO, J.J. - CHAN, H.L. - MECKLENBURG, M. - REGAN, B.C. Imaging Dielectric Breakdown in Valence Change Memory. In ADVANCED FUNCTIONAL MATERIALS. ISSN 1616-301X, JAN 2022, vol. 32, no. 2. Dostupné na: https://doi.org/10.1002/adfm.202102313. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2016 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1088/0022-3727/49/21/215102 
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File name Access Size Downloaded Type License Interface engineered HfO2-based 3D vertical ReRAM.pdf Neprístupný/archív 2.2 MB 1 Publisher's version rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2016 2015 2.772 Q1 0.886 Q1
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