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Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures
Title Characterization of capture cross sections of interface states in dielectric/III-nitride heterojunction structures Author Matys M. Co-authors Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV ORCID Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Adamowicz J.B. Yatabe Z. Hashizume T. Source document Journal of Applied Physics. Vol. 119 (2016), art. no. 205304 Language eng - English URL URL link Document kind rozpis článkov z periodík (rbx) Citations KUMAR, S. - GUPTA, P. - GUINEY, I. - HUMPHREYS, C.J. - RAGHAVAN, S. - MURALIDHARAN, R. - NATH, D.N. In IEEE TRANSACTIONS ON ELECTRON DEVICES. DEC 2017, vol. 64, no. 12, p. 4868-4874. KUBO, T. - MIYOSHI, M. - EGAWA, T. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. JUN 2017, vol. 32, no. 6. LIU, X.Y. - WANG, X.H. - ZHANG, Y.G. - WEI, K. - ZHENG, Y.K. - KANG, X.W. - JIANG, H.J. - LI, J.F. - WANG, W.W. - WU, X.B. - WANG, X. - HUANG, S. Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition. In ACS APPLIED MATERIALS & INTERFACES. JUN 27 2018, vol. 10, no. 25, p. 21721-21729. TAPAJNA, M. Current Understanding of Bias-Temperature Instabilities in GaN MIS Transistors for Power Switching Applications. In CRYSTALS. ISSN 2073-4352, DEC 2020, vol. 10, no. 12. VERMA, M. - NANDI, A. Design and Analysis of AlGaN/GaN Based DG MOSHEMT for High-Frequency Application. In TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS. ISSN 1229-7607, AUG 2020, vol. 21, no. 4, p. 427-435. LIU, Y.B. - SHEN, J.Y. - XING, J.Y. - YAO, W.Q. - LIU, H.H. - DAI, Y.Q. - YANG, L.K. - WANG, F.G. - REN, Y. - ZHANG, M.J. - WU, Z.S. - LIU, Y. - ZHANG, B.J. Abnormal phenomenon of source-drain current of AlGaN/GaN heterostructure device under UV/visible light irradiation*. In CHINESE PHYSICS B. ISSN 1674-1056, NOV 2021, vol. 30, no. 11. MINETTO, A. - MODOLO, N. - SAYADI, L. - KOLLER, C. - OSTERMAIER, C. - MENEGHINI, M. - ZANONI, E. - PRECHTL, G. - SICRE, S. - DEUTSCHMANN, B. - HABERLEN, O. Drain Field Plate Impact on the Hard-Switching Performance of AlGaN/GaN HEMTs. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, OCT 2021, vol. 68, no. 10, p. 5003-5008. DENG, K.X. - WANG, X.H. - HUANG, S. - YIN, H.B. - FAN, J. - SHI, W. - GUO, F.Q. - WEI, K. - ZHENG, Y.K. - SHI, J.Y. - JIANG, H.J. - WANG, W.W. - LIU, X.Y. Suppression and characterization of interface states at low-pressure-chemical-vapor-deposited SiNx/III-nitride heterostructures. In APPLIED SURFACE SCIENCE. ISSN 0169-4332, MAR 15 2021, vol. 542. HATAKEYAMA, Y. - AKAZAWA, M. Interface state density distribution near conduction band edge at Al2O3/Mg-ion-implanted GaN interface formed after activation annealing using AlN cap layer. In AIP ADVANCES. DEC 1 2022, vol. 12, no. 12. Dostupné na: https://doi.org/10.1063/5.0117321. MODOLO, N. - DE SANTI, C. - BARATELLA, G. - BETTINI, A. - BORGA, M. - POSTHUMA, N. - BAKEROOT, B. - YOU, S. - DECOUTERE, S. - BEVILACQUA, A. - NEVIANI, A. - MENEGHESSO, G. - ZANONI, E. - MENEGHINI, M. Compact Modeling of Nonideal Trapping/Detrapping Processes in GaN Power Devices. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, AUG 2022, vol. 69, no. 8, p. 4432-4437. Dostupné na: https://doi.org/10.1109/TED.2022.3184622. AL AHMED, S.R. Investigation on the Performance Enhancement of Heterojunction SnS Thin-Film Solar Cell with a Znsub3/subPsub2/sub Hole Transport Layer and a TiOsub2/sub Electron Transport Layer. In ENERGY & FUELS. ISSN 0887-0624, DEC 28 2023, vol. 38, no. 2, p. 1462-1476. Dostupné na: https://doi.org/10.1021/acs.energyfuels.3c03719. KHATUN, M. - HOSEN, A. - AL AHMED, S.R. Evaluating the performance of efficient Cusub2/subNiSnSsub4/sub solar cell-A two stage theoretical attempt and comparison to experiments. In HELIYON. OCT 2023, vol. 9, no. 10. Dostupné na: https://doi.org/10.1016/j.heliyon.2023.e20603. ZHANG, H. - ZHENG, X.F. - WANG, X.H. - ZHU, T. - WANG, Y.Z. - MA, X.H. - HAO, Y. Characterization of different trap states in AlGaN/GaN MIS-HEMTs under high reverse gate stress. In MICRO AND NANOSTRUCTURES. JUN 2023, vol. 178. Dostupné na: https://doi.org/10.1016/j.micrna.2023.207579. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2016 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1063/1.4952708 
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File name Access Size Downloaded Type License Characterization of capture cross sections of interface states in dielectricIII-nitride heterojunction structures.pdf available 1.9 MB 1 Publisher's version rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2016 2015 2.101 Q2 0.821 Q2
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