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Trap analysis in GaN-based heterostructures using current transients measurements

  1. TitleTrap analysis in GaN-based heterostructures using current transients measurements
    Author Florovič M.
    Co-authors Škriniarová Jaroslava

    Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Kováč Jaroslav

    Kordoš Peter

    Source document ASDAM 2016 : the 11th International Conference on Advanced Semiconductor Devices and Microsystems. P. 185-188. - : IEEE, 2016 / Haščík Štefan 1956 ; Dzuba Jaroslav 1987 ; Vanko Gabriel 1981
    Languageeng - English
    Document kindrozpis článkov z periodík (rzb)
    CategoryADMB - Scientific papers in foreign non-impacted journals registered in Web of Sciences or Scopus
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2016
    Registered inWOS
    Registered inSCOPUS
    DOI 10.1109/ASDAM.2016.7805926
    article

    article

    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    N
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    2016
Number of the records: 1  

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