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On the origin of interface states at oxide/III-nitride heterojunction interfaces
Title On the origin of interface states at oxide/III-nitride heterojunction interfaces Author Matys M. Co-authors Adamowicz J.B. Domanowska A. Michalewicz A. Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV ORCID Akazawa M. Yatabe Z. Hashizume T. Source document Journal of Applied Physics. Vol. 120 (2016), no. 225305 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations IM, K.S. - ATMACA, G. - WON, C.H. - CAULMILONE, R. - CRISTOLOVEANU, S. - KIM, Y.T. - LEE, J.H. Current Collapse-Free and Self-Heating Performances in Normally Off GaN Nanowire GAA-MOSFETs. In IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2018, vol. 6, no. 1, p. 354-359. LE, S.P. - NGUYEN, D.D. - SUZUKI, T. Insulator-semiconductor interface fixed charges in AlGaN/GaN metal-insulator-semiconductor devices with Al2O3 or AlTiO gate dielectrics. In JOURNAL OF APPLIED PHYSICS. JAN 21 2018, vol. 123, no. 3. UEDONO, A. - NABATAME, T. - EGGER, W. - KOSCHINE, T. - HUGENSCHMIDT, C. - DICKMANN, M. - SUMIYA, M. - ISHIBASHI, S. Vacancy-type defects in Al2O3/GaN structure probed by monoenergetic positron beams. In JOURNAL OF APPLIED PHYSICS. APR 21 2018, vol. 123, no. 15. LIU, X.Y. - WANG, X.H. - ZHANG, Y.G. - WEI, K. - ZHENG, Y.K. - KANG, X.W. - JIANG, H.J. - LI, J.F. - WANG, W.W. - WU, X.B. - WANG, X. - HUANG, S. Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition. In ACS APPLIED MATERIALS & INTERFACES. JUN 27 2018, vol. 10, no. 25, p. 21721-21729. SATO, T. - URYU, K. - OKAYASU, J. - KIMISHIMA, M. - SUZUKI, T. Suppression of drain-induced barrier lowering by double-recess overlapped gate structure in normally-off AlGaN-GaN MOSFETs. In APPLIED PHYSICS LETTERS. AUG 6 2018, vol. 113, no. 6. IROKAWA, Yoshihiro - NABATAME, Toshihide - YUGE, Kazuya - UEDONO, Akira - OHI, Akihiko - IKEDA, Naoki - KOIDE, Yasuo. Investigation of Al2O3/GaN interface properties by sub-bandgap photo-assisted capacitance-voltage technique. In AIP ADVANCES. ISSN 2158-3226, 2019, vol. 9, no. 8, pp.085319 JO, Yoo Jin - JIN, Hyun Soo - HA, Min-Woo - PARK, Tae Joo. Sulfur Incorporation at Interface Between Atomic-Layer-Deposited Al2O3 Thin Film and AlGaN/GaN Heterostructure. In ELECTRONIC MATERIALS LETTERS. ISSN 1738-8090, 2019, vol. 15, no. 2, pp. 179-185. ENISHERLOVA, K. L. - TEMPER, E. M. - KOLKOVSKY, Yu V. - MEDVEDEV, B. K. - KAPILIN, S. A. The ALD Films of Alinf2/infOinf3/inf, SiNinf x/inf, and SiON as Passivation Coatings in AlGaN/GaN HEMT. In Russian Microelectronics. ISSN 10637397, 2020-12-01, 49, 8, pp. 603-611. KAMADA, Y. - OZAKI, S. - YAITA, J. - YAMADA, A. - OHKI, T. - MINOURA, Y. - KUMAZAKI, Y. - OKAMOTO, N. - MAKIYAMA, K. - NAKAMURA, N. - KOTANI, J. Thermally stable and low trap density SiNx/AlON bi-layer structure for AlGaN/GaN MIS-HEMTs. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, APR 1 2020, vol. 59, no. 4. NGUYEN, D.D. - SUZUKI, T.K. Interface charge engineering in AlTiO/AlGaN/GaN metal-insulator-semiconductor devices. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, MAR 7 2020, vol. 127, no. 9. UEDONO, A. - UENO, W. - YAMADA, T. - HOSOI, T. - EGGER, W. - KOSCHINE, T. - HUGENSCHMIDT, C. - DICKMANN, M. - WATANABE, H. Voids and vacancy-type defects in SiO2/GaN structures probed by monoenergetic positron beams. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, FEB 7 2020, vol. 127, no. 5. RAJA, P.V. - SUBRAMANI, N.K. - GAILLARD, F. - BOUSLAMA, M. - SOMMET, R. - NALLATAMBY, J.C. Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y-21 Frequency Dispersion Properties. In ELECTRONICS. DEC 2021, vol. 10, no. 24. MENEGHINI, M. - DE SANTI, C. - ABID, I. - BUFFOLO, M. - CIONI, M. - KHADAR, R.A. - NELA, L. - ZAGNI, N. - CHINI, A. - MEDJDOUB, F. - MENEGHESSO, G. - VERZELLESI, G. - ZANONI, E. - MATIOLI, E. GaN-based power devices: Physics, reliability, and perspectives. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, NOV 8 2021, vol. 130, no. 18. ZHENG, Z.Y. - ZHANG, L. - SONG, W.J. - CHEN, T. - FENG, S.R. - NG, Y.H. - SUN, J.H. - XU, H. - YANG, S. - WEI, J. - CHEN, K.J. Threshold Voltage Instability of Enhancement-Mode GaN Buried p-Channel MOSFETs. In IEEE ELECTRON DEVICE LETTERS. ISSN 0741-3106, NOV 2021, vol. 42, no. 11, p. 1584-1587. RRUSTEMI, B. - JAUD, M.A. - TRIOZON, F. - PIOTROWICZ, C. - VANDENDAELE, W. - LEROUX, C. - LE ROYER, C. - BISCARRAT, J. - GHIBAUDO, G. Investigation on interface charges in SiN/AlxGa1-xN/GaN heterostructures by analyzing the gate-to-channel capacitance and the drain current behaviors. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, SEP 14 2021, vol. 130, no. 10. NGUYEN, D.D. - ISODA, T. - DENG, Y.C. - SUZUKI, T.K. Normally-off operations in partially-gate-recessed AlTiO/AlGaN/GaN field-effect transistors based on interface charge engineering. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, JUL 7 2021, vol. 130, no. 1. MAKSIMOWSKI, P. - NASTALA, A. Neutralization of wastewater from trinitrotoluene (TNT) production under industrial conditions. In PRZEMYSL CHEMICZNY. ISSN 0033-2496, MAR 2021, vol. 100, no. 3, p. 278-285. ZHANG, L. - ZHENG, Z.Y. - CHENG, Y. - NG, Y.H. - FENG, S.R. - SONG, W.J. - CHEN, T. - CHEN, K.J. SiN/in-situ-GaON Staggered Gate Stack on p-GaN for Enhanced Stability in Buried-Channel GaN p-FETs. In 2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). ISSN 2380-9248, 2021. ZHANG, L. - ZHENG, Z.Y. - SONG, W.J. - CHEN, T. - FENG, S.R. - CHEN, J.T. - HUA, M.Y. - CHEN, K.J. Gate Leakage and Reliability of GaN p-Channel FET With SiNx/GaON Staggered Gate Stack. In IEEE ELECTRON DEVICE LETTERS. ISSN 0741-3106, NOV 2022, vol. 43, no. 11, p. 1822-1825. Dostupné na: https://doi.org/10.1109/LED.2022.3206470. ZHANG, J.H. - SU, X.J. - CAI, Y.T. - LI, D.D. - WANG, L.H. - CHEN, J.J. - ZENG, X.H. - WANG, J.F. - XU, K. Atomic-resolved structural and electric field analysis of the passivation interface of MIS-HEMTs. In AIP ADVANCES. APR 1 2022, vol. 12, no. 4. Dostupné na: https://doi.org/10.1063/5.0087659. CALZOLARO, A. - MIKOLAJICK, T. - WACHOWIAK, A. Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices. In MATERIALS. FEB 2022, vol. 15, no. 3. Dostupné na: https://doi.org/10.3390/ma15030791. SU, H.K. - ZHANG, T. - XU, S.R. - TAO, H.C. - ZHANG, J.C. - HAO, Y. Normally-Off p-Channel AlGaN/GaN/AlGaN MESFET With High Breakdown Voltage and Ultra-Low Interface State Density. In IEEE ELECTRON DEVICE LETTERS. ISSN 0741-3106, DEC 2023, vol. 44, no. 12, p. 1939-1942. Dostupné na: https://doi.org/10.1109/LED.2023.3323497. MALLEM, S.P.R. - PUNEETHA, P. - LEE, D.Y. - KIM, Y. - KIM, H.J. - IM, K.S. - AN, S.J. Carrier Trap and Their Effects on the Surface and Core of AlGaN/GaN Nanowire Wrap-Gate Transistor. In NANOMATERIALS. JUL 2023, vol. 13, no. 14. Dostupné na: https://doi.org/10.3390/nano13142132. YOO, S.H. - TODOROVA, M. - NEUGEBAUER, J. - VAN DE WALLE, C.G. Microscopic Origin of Polarization Charges at GaN/(Al,Ga)N Interfaces. In PHYSICAL REVIEW APPLIED. ISSN 2331-7019, JUN 12 2023, vol. 19, no. 6. Dostupné na: https://doi.org/10.1103/PhysRevApplied.19.064037. QIANG, L. Modeling for ammonia gas concentration detection of GaN-based sensors. In MODERN PHYSICS LETTERS B. ISSN 0217-9849, SEP 20 2023, vol. 37, no. 26. Dostupné na: https://doi.org/10.1142/S0217984923500926. BLANTON, E.W. - PRUSNICK, T.A. - GREEN, A.J. - GLAVIN, N. - SNURE, M. Effect of surface potential pinning on strain behavior of AlGaN/GaN device structures. In APPLIED PHYSICS LETTERS. ISSN 0003-6951, APR 24 2023, vol. 122, no. 17. Dostupné na: https://doi.org/10.1063/5.0132472. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2016 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1063/1.4971409 
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File name Access Size Downloaded Type License On the origin of interface states at oxideIII-nitride heterojunction interfaces.pdf Neprístupný/archív 3.1 MB 1 Publisher's version rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2016 2015 2.101 Q2 0.821 Q2
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