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Effect of HCN passivation on silicon oxide thin layer

  1. TitleEffect of HCN passivation on silicon oxide thin layer
    Author Kopani M. Pinčík Emil 1956 SAVFYZIK - Fyzikálny ústav SAV    ORCID

    Co-authors Mikula M. Kobayashi H. Takahashi M.
    Source document Journal of the Chinese Advanced Materials Society. Vol. 5, no. 1 (2017), p. 57-64
    Languageeng - English
    CountryCN - China
    Document kindrozpis článkov z periodík (rbx)
    CategoryADEB - Scientific papers in other foreign journals not registered in Current Contents Connect without IF (non-impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2017
    DOI 10.1080/22243682.2016.1256792
    article

    article

    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    N
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    2017
Number of the records: 1  

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