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Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment

  1. TitleProperties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment
    Author Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV    ORCID
    Co-authors Gucmann Filip 1987 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Kúdela Róbert 1952 SAVELEK - Elektrotechnický ústav SAV

    Mičušík Matej 1977- SAVPOLYM - Ústav polymérov SAV    ORCID

    Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Válik Lukáš 1990 SAVELEK - Elektrotechnický ústav SAV

    Greguš J.

    Blaho Michal 1983 SAVELEK - Elektrotechnický ústav SAV

    Kordoš Peter

    Source document Applied Surface Science. Vol. 395 (2017), p. 140-144
    Languageeng - English
    Document kindrozpis článkov z periodík (rbx)
    CitationsSILVA, J.C.F. - DOS SANTOS, J.D. - TAFT, C.A. - MARTINS, J.B.L. - LONGO, E. In JOURNAL OF MOLECULAR MODELING. JUL 2017, vol. 23, no. 7.
    SHARMA, I. - MEHTA, B.R. In JOURNAL OF ALLOYS AND COMPOUNDS. NOV 5 2017, vol. 723, p. 50-57.
    KUMAR, J. - INGOLE, S. In JOURNAL OF ALLOYS AND COMPOUNDS. DEC 15 2017, vol. 727, p. 1089-1094.
    ZHOU, Y.X. - LIU, X.P. - ZHU, J. Controlled high-quality interface of a Ti2.5O3(010)/GaAs(001) heterostructure enabled by minimized lattice mismatch and suppressed ion diffusion. In JOURNAL OF COLLOID AND INTERFACE SCIENCE. ISSN 0021-9797, FEB 15 2020, vol. 560, p. 769-776.
    PANDA, Sangita R. - SAHU, Trinath - PANDA, Ajit Kumar. Analysing structural asymmetry on the nonmonotonic electron mobility of pseudomorphic heterojunction field effect transistors. In Proceedings of 4th International Conference on 2021 Devices for Integrated Circuit, DevIC 2021, 2021-05-19, pp. 71-74. Dostupné na: https://doi.org/10.1109/DevIC50843.2021.9455826.
    PANDA, S.R. - PRADHAN, M. - SAHU, T. - PANDA, A.K. Study of nonmonotonic electron mobility due to influence of asymmetric structure parameters in pseudomorphic heterojunction field effect transistors. In PHYSICA SCRIPTA. ISSN 0031-8949, NOV 1 2022, vol. 97, no. 11. Dostupné na: https://doi.org/10.1088/1402-4896/ac9862.
    GIL-CORRALES, J.A. - MORALES, A.L. - YUCEL, M.B. - KASAPOGLU, E. - DUQUE, C.A. Electronic Transport Properties in GaAs/AlGaAs and InSe/InP Finite Superlattices under the Effect of a Non-Resonant Intense Laser Field and Considering Geometric Modifications. In INTERNATIONAL JOURNAL OF MOLECULAR SCIENCES. MAY 2022, vol. 23, no. 9. Dostupné na: https://doi.org/10.3390/ijms23095169.
    PANDA, S.R. - PRADHAN, M. - SAHU, T. - PANDA, A.K. Enhancement of electron transport mobility in GaAs/InGaAs asymmetrically doped narrow quantum well pHEMT structure. In PHYSICA SCRIPTA. ISSN 0031-8949, DEC 1 2023, vol. 98, no. 12. Dostupné na: https://doi.org/10.1088/1402-4896/ad0934.
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2017
    Registered inWOS
    Registered inSCOPUS
    Registered inCCC
    DOI 10.1016/j.apsusc.2016.07.019
    article

    article

    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    201720163.387Q10.958Q1
Number of the records: 1  

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