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Temperature-induced instability of the threshold voltage in GaN-based heterostructure field-effect transistors
Title Temperature-induced instability of the threshold voltage in GaN-based heterostructure field-effect transistors Author Florovič M. Co-authors Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV ORCID Kováč Jaroslav Kordoš Peter Source document Semiconductor Science and Technology. Vol. 32 (2017), art. no. 025017 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations WANG, N. - WANG, H. - LIN, X.P. - QI, Y.L. - DUAN, T.L. - JIANG, L.L. - IERVOLINO, E. - CHENG, K. - YU, H.Y. In AIP ADVANCES. SEP 2017, vol. 7, no. 9. LALINSKY, T. - VANKO, G. - DOBROCKA, E. - OSVALD, J. - BABCHENKO, O. - DZUBA, J. - VESELY, M. - VANCO, L. - VOGRINCIC, P. - VINCZE, A. In PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE. DEC 2017, vol. 214, no. 12. CHAKRABORTY, A. - GHOSH, S. - MUKHOPADHYAY, P. - DAS, S. - BAG, A. - BISWAS, D. Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis. In SUPERLATTICES AND MICROSTRUCTURES. JAN 2018, vol. 113, p. 147-152. CUI, Miao - SUN, Ruize - BU, Qinglei - LIU, Wen - WEN, Huiqing - LI, Ang - LIANG, Yung C. - ZHAO, Cezhou. Monolithic GaN Half-Bridge Stages With Integrated Gate Drivers for High Temperature DC-DC Buck Converters. In IEEE ACCESS. ISSN 2169-3536, 2019, vol. 7, no., pp. 184375-184384. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2017 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1088/1361-6641/aa5253 
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