Number of the records: 1
State of the art on gate insulation and surface passivation for GaN-based power HEMTs
Title State of the art on gate insulation and surface passivation for GaN-based power HEMTs Author Hashizume T. Co-authors Nishiguchi K. Kaneki S. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Yatabe Z. Source document Materials science in semiconductor processing. Vol. 78 (2018), p. 85-95 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations FIORENZA, Patrick - GRECO, Giuseppe - SCHILIRO, Emanuela - IUCOLANO, Ferdinando - NIGRO, Raffaella Lo - ROCCAFORTE, Fabrizio. Determining oxide trapped charges in Al inf2/inf O inf3/inf insulating films on recessed AlGaN/GaN heterostructures by gate capacitance transients measurements. In Japanese Journal of Applied Physics. ISSN 00214922, 2018-05-01, 57, 5, pp.050307 ROCCAFORTE, F. - FIORENZA, P. - GRECO, G. - LO NIGRO, R. - GIANNAZZO, F. - IUCOLANO, F. - SAGGIO, M. Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices. In MICROELECTRONIC ENGINEERING. FEB 5 2018, vol. 187, p. 66-77. GAO, Z. - ROMERO, M.F. - CALLE, F. Thermal and Electrical Stability Assessment of AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistors (MOS-HEMTs) With HfO2 Gate Dielectric. In IEEE TRANSACTIONS ON ELECTRON DEVICES. AUG 2018, vol. 65, no. 8, p. 3142-3148. HENTSCHEL, R. - GARTNER, J. - WACHOWIAK, A. - GROSSER, A. - MIKOLAJICK, T. - SCHMULT, S. Surface morphology of AlGaN/GaN heterostructures grown on bulk GaN by MBE. In JOURNAL OF CRYSTAL GROWTH. OCT 15 2018, vol. 500, p. 1-4. LIU, Z.K. - CHEN, D.B. - WAN, L.J. - LI, G.Q. Micron-Scale Annealing for Ohmic Contact Formation Applied in GaN HEMT Gate-First Technology. In IEEE ELECTRON DEVICE LETTERS. DEC 2018, vol. 39, no. 12, p. 1896-1899. ZENG, F.M. - AN, J.X. - ZHOU, G.N. - LI, W.M. - WANG, H. - DUAN, T.L. - JIANG, L.L. - YU, H.Y. A Comprehensive Review of Recent Progress on GaN High Electron Mobility Transistors: Devices, Fabrication and Reliability. In ELECTRONICS. DEC 2018, vol. 7, no. 12. ROCCAFORTE, F. - FIORENZA, P. - LO NIGRO, R. - GIANNAZZO, F. - GRECO, G. Physics and technology of gallium nitride materials for power electronics. In RIVISTA DEL NUOVO CIMENTO. DEC 2018, vol. 41, no. 12, p. 625-681. TOUATI, Z. - HAMAIZIA, Z. - MESSAI, Z. Study of AlGaN/GaN MOS-HEMTs with TiO2 gate dielectric and regrown source/drain. In JOURNAL OF NEW TECHNOLOGY AND MATERIALS. DEC 2018, vol. 8, no. 2, p. 16-23. ROCCAFORTE, F. - GRECO, G. - FIORENZA, P. Processing issues in SiC and GaN power devices technology: the cases of 4H-SiC planar MOSFET and recessed hybrid GaN MISHEMT. In CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE. 2018, p. 7-16. SUSANTO, Iwan - TSAI, Chi Yu - RAHMIATI, Tia - FACHRUDDIN - YU, Ing Song. Morphology and surface stability of GaN thin film grown on the short growth time by Plasma Assisted Molecular Beam Epitaxy. In Journal of Physics: Conference Series. 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Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2018 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1016/j.mssp.2017.09.028 
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File name Access Size Downloaded Type License State of the art on gate insulation and surface passivation for GaN-based power HEMTs.pdf available 1.6 MB 1 Publisher's version rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2018 2017 2.593 Q2 0.634 Q2
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