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Characterization of monolithic InAlN/GaN NAND logic cell supported by circuit and device simulations
Title Characterization of monolithic InAlN/GaN NAND logic cell supported by circuit and device simulations Author Chvála A. Co-authors Nagy L. Marek J. Priesol J. Donoval D. Blaho Michal 1983 SAVELEK - Elektrotechnický ústav SAV Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ORCID Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Šatka A. Source document IEEE Transactions on Electron Devices. Vol. 65 (2018), p. 2666-2669 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations HWANG, I.T. - JANG, K.W. - KIM, H.J. - LEE, S.H. - LIM, J.W. - YANG, J.M. - KWON, H.S. - KIM, H.S. Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect. In APPLIED SCIENCES-BASEL. SEP 1 2019, vol. 9, no. 17. GUAN, H. - WANG, S.X. - CHEN, L.L. - GAO, B. - WANG, Y. - JIANG, C.Y. Channel Characteristics of InAs/AlSb Heterojunction Epitaxy: Comparative Study on Epitaxies with Different Thickness of InAs Channel and AlSb Upper Barrier. In COATINGS. ISSN 2079-6412, MAY 2019, vol. 9, no. 5. LIAO, B.Y. - ZHOU, Q.B. - QIN, J. - WANG, H. Simulation of AlGaN/GaN HEMTs' Breakdown Voltage Enhancement Using Gate Field-Plate, Source Field-Plate and Drain Field Plate. In ELECTRONICS. ISSN 2079-9292, APR 2019, vol. 8, no. 4. LV, Z.H. - XU, Z.W. - SONG, C.Y. A compact model for dual-gate GaAs PHEMT and application for power amplifier design. In IEICE ELECTRONICS EXPRESS. ISSN 1349-2543, OCT 25 2021, vol. 18, no. 20. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2018 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1109/TED.2018.2828464 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2018 2017 2.620 Q2 0.839 Q1
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