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Schottky barrier detectors based on high quality 4H-SIC semiconductor: electrical and detection properties
Title Schottky barrier detectors based on high quality 4H-SIC semiconductor: electrical and detection properties Author Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Hrubčín Ladislav 1951 SAVELEK - Elektrotechnický ústav SAV Šagátová A. Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV ORCID Boháček Pavol 1954 SAVELEK - Elektrotechnický ústav SAV Zápražný Zdenko 1980 SAVELEK - Elektrotechnický ústav SAV ORCID Sedlačková K. Sekáčová Mária 1955 SAVELEK - Elektrotechnický ústav SAV Dubecký František 1946 SAVELEK - Elektrotechnický ústav SAV Skuratov V.A. Korytár Dušan 1950 SAVELEK - Elektrotechnický ústav SAV ORCID Nečas V. Source document Applied Surface Science. Vol. 461 (2018), p. 276-280 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations ZHOU, Yuying - LI, Shimin - WANG, Ying - HUANG, Qing - ZHANG, Wei - YAO, Yao - HAO, Jiaming - SUN, Yan - TANG, Ming - LI, Bin - ZHANG, Yi - HU, Jun - YAN, Long. One-step ion beam irradiation manufacture of 3D micro/nanopatterned structures in SiC with tunable work functions. In CARBON. ISSN 0008-6223, 2019, vol. 148, no., pp. 387-393. DONG, Peng - QIN, Yazhou - YU, Xuegong - XU, Xingliang - CHEN, Zhe - LI, Lianghui - CUI, Yingxin. Electron Radiation Effects on the 4H-SiC PiN Diodes Characteristics: An Insight From Point Defects to Electrical Degradation. In IEEE ACCESS. ISSN 2169-3536, 2019, vol. 7, no., pp. 170385-170391. XIE, X.M. - SU, Z.A. - HUANG, D. - YANG, C. - WANG, Y.F. - JIANG, D.Y. - HUANG, Q.Z. Synthesis and growth mechanism of SiC/SiO2 nanochains by catalyst-free thermal evaporation method in Ar/CO atmosphere. In TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA. ISSN 1003-6326, NOV 2020, vol. 30, no. 11, p. 3058-3066. SARAC, Y. - SENER, S.S. - BALTAKESMEZ, A. - GUZELDIR, B. - SAGLAM, M. A comparative study on theoretical and experimental methods using basic electrical parameters of Au/CNTs/lnP/Au-Ge diodes. In JOURNAL OF ALLOYS AND COMPOUNDS. ISSN 0925-8388, MAY 25 2020, vol. 824. JIANG, L. - ZOU, W.T. - ZHANG, Q.P. - CHEN, Y.P. - YAN, X.H. - WANG, Y. - WANG, S.Y. Large-area vertical Schottky barrier diodes based on 4H-SiC epilayers: Temperature-dependent electrical characteristics. In NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT. ISSN 0168-9002, MAR 2023, vol. 1048. Dostupné na: https://doi.org/10.1016/j.nima.2022.167917. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2018 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1016/j.apsusc.2018.07.008 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2018 2017 4.439 Q1 1.093 Q1
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