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Determination of secondary-ions yield in SIMS depth profiling of Si, Mg, and C ions implanted GaN epitaxial layers
Title Determination of secondary-ions yield in SIMS depth profiling of Si, Mg, and C ions implanted GaN epitaxial layers Author Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Vincze A. Noga Pavol Dobrovodský Jozef Šagátová A. Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV ORCID Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ORCID Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Source document ASDAM 2018 : The Twelfth International Conference on Advanced Semiconductor Devices and Microsystems. P. 141-144. - : IEEE, 2018 / Breza J. ; Donoval D. ; Vavrinský E. ; ASDAM 2018 The Twelfth International Conference on Advanced Semiconductor Devices and Microsystems Language eng - English Document kind rozpis článkov z periodík (rzb) Citations SENEVIRATHNA, M.K.I. - VERNON, M. - COOKE, G.A. - CROSS, G.B. - KOZHANOV, A. - WILLIAMS, M.D. Analysis of useful ion yield for Si in GaN by secondary ion mass spectrometry. In JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B. ISSN 2166-2746, JUL 2020, vol. 38, no. 4. HAJEK, F. - HOSPODKOVA, A. - HUBACEK, T. - OSWALD, J. - PANGRAC, J. - DOMINEC, F. - HORESOVSKY, R. - KULDOVA, K. Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells. In JOURNAL OF LUMINESCENCE. ISSN 0022-2313, AUG 2021, vol. 236. LAGZDINA, E. - LINGIS, D. - PIPON, Y. - PLUKIENE, R. - IGNATJEV, I. - PLUKIS, A. - MONCOFFRE, N. - NIAURA, G. - REMEIKIS, V. Application of ion implantation as a tool to study neutron induced morphological changes in HOPG and RBMK-1500 reactor graphite. In NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. ISSN 0168-583X, MAY 2023, vol. 538, p. 218-226. Dostupné na: https://doi.org/10.1016/j.nimb.2023.02.024. Category AFD - Published papers from domestic scientific conferences Year 2018 Registered in WOS Registered in SCOPUS DOI 10.1109/ASDAM.2018.8544657 
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rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2018
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