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Creation of two-dimesional electron gas and role of surface donors in III-N metal-oxide-semiconductor high-electron mobility transistors
Title Creation of two-dimesional electron gas and role of surface donors in III-N metal-oxide-semiconductor high-electron mobility transistors Author Gucmann Filip 1987 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV ORCID Pohorelec Ondrej SAVELEK - Elektrotechnický ústav SAV Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV Hušeková Kristína 1957 SAVELEK - Elektrotechnický ústav SAV Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Source document Physica Status Solidi A : applications and materials science. Vol. 215 (2018), no. 1800090 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations SONG, K. - ZHANG, H.C. - FU, H.Q. - YANG, C. - SINGH, R. - ZHAO, Y.J. - SUN, H.D. - LONG, S.B. Normally-off AlN/beta-Ga2O3 field-effect transistors using polarization-induced doping. In JOURNAL OF PHYSICS D-APPLIED PHYSICS. ISSN 0022-3727, AUG 19 2020, vol. 53, no. 34. SHI, Y.J. - CHEN, W.J. - SUN, R.Z. - LIU, C. - XIN, Y.J. - XIA, Y. - WANG, F.Z. - XU, X.R. - DENG, X.C. - CHEN, T.S. - ZHANG, B. Modeling the Influence of the Acceptor-Type Trap on the 2DEG Density for GaN MIS-HEMTs. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, JUN 2020, vol. 67, no. 6, p. 2290-2296. NGUYEN, D.D. - SUZUKI, T.K. Interface charge engineering in AlTiO/AlGaN/GaN metal-insulator-semiconductor devices. In JOURNAL OF APPLIED PHYSICS. ISSN 0021-8979, MAR 7 2020, vol. 127, no. 9. KAUSHIK, P.K. - SINGH, S.K. - GUPTA, A. - BASU, A. - CHANG, E.Y. Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs. In NANOSCALE RESEARCH LETTERS. ISSN 1931-7573, OCT 20 2021, vol. 16, no. 1. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2018 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1002/pssa.201800090 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2018 2017 1.795 Q2 0.648 Q1
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