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Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures
Title Generation of hole gas in non-inverted InAl(Ga)N/GaN heterostructures Author Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Chauhan Prerna SAVELEK - Elektrotechnický ústav SAV Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV ORCID Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV ORCID Vančo L. Veselý M. Bouazzaoui F. Chauvat M.-P. Ruterana P. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Source document Applied Physics Express. Vol. 12 (2019), no. 014001 Language eng - English URL URL link Document kind rozpis článkov z periodík (rbx) Citations MURUGAPANDIYAN, P. - MOHANBABU, A. - LAKSHMI, V.R. - WASIM, M. - SUNDARAM, K.M. Investigation of Quaternary Barrier InAlGaN/GaN/AlGaN Double-Heterojunction High-Electron-Mobility Transistors (HEMTs) for High-Speed and High-Power Applications. In JOURNAL OF ELECTRONIC MATERIALS. ISSN 0361-5235, JAN 2020, vol. 49, no. 1, SI, p. 524-529. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2019 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.7567/1882-0786/aaef41 article
File name Access Size Downloaded Type License Generation of hole gas in non-inverted InAl.pdf Neprístupný/archív 605.7 KB 0 Publisher's version rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2019 2018 2.772 Q2 0.924 Q1
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