Tungsten silicide formation by multipulse excimer laser irradiation

Number of the records: 1

Title	Tungsten silicide formation by multipulse excimer laser irradiation
Author	Luby Štefan 1941 SAVFYZIK - Fyzikálny ústav SAV
Co-authors	Majková Eva 1950 SAVFYZIK - Fyzikálny ústav SAV ^ORCID

Co-authors	Danna E. Luches A. Martino M. Tufano A. Majni G.
Source document	Applied Surface Science. Vol. 69, no. 1-4 (1993), p. 345-349
Language	eng - English
Country	NL - Netherlands
Document kind	rozpis článkov z periodík (rbx)
Citations	LAWRENCE, J. - PEY, K. L. - LEE, P. S. Pulsed Laser Annealing Technology for Nano-Scale Fabrication of Silicon-Based Devices in Semiconductors. In ADVANCES IN LASER MATERIALS PROCESSING: TECHNOLOGY, RESEARCH AND APPLICATIONS, 2ND EDITION. ISSN 2052-5532, 2018, pp. 299-337.
	BARBERO, CJ - DENG, C - SIGMON, TW - RUSSELL, SW - ALFORD, TL. The fabrication of nickel and chromium silicide using an XeCl excimer laser. In JOURNAL OF CRYSTAL GROWTH. ISSN 0022-0248, 1996, vol. 165, no. 1-2, pp. 57-60.
	GEDEVANISHVILI, S - MUNIR, ZA. THE INFLUENCE OF AN ELECTRIC-FIELD ON THE MECHANISM OF COMBUSTION SYNTHESIS OF TUNGSTEN SILICIDES. In JOURNAL OF MATERIALS RESEARCH. ISSN 0884-2914, 1995, vol. 10, no. 10, pp. 2642-2647.
Category	ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	1993

article

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	A

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
1993	1992	1.150

Number of the records: 1