Growth evolution of N-polar Indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer

Number of the records: 1

Title	Growth evolution of N-polar Indium-rich InAlN layer on c-sapphire via strain relaxation by ultrathin AlON interlayer
Author	Chauhan Prerna SAVELEK - Elektrotechnický ústav SAV
Co-authors	Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Minj A.
	Chauvat M.-P.
	Ruterana P.
	Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ^ORCID

Source document	Applied Surface Science. Vol. 502 (2020), no. 144086
Language	eng - English
Document kind	rozpis článkov z periodík (rbx)
Citations	CHEN, L. - LIN, W. - CHEN, H.Y. - XU, H.Q. - GUO, C.Y. - LIU, Z.B. - YAN, J.C. - SUN, J. - LIU, H. - WU, J.S. - GUO, W. - KANG, J.Y. - YE, J.C. Annihilation and Regeneration of Defects in (11(2)over-bar2) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth. In CRYSTAL GROWTH & DESIGN. ISSN 1528-7483, MAY 5 2021, vol. 21, no. 5, p. 2911-2919.
	SHIH, H.J. - LO, I. - WANG, Y.C. - TSAI, C.D. - YANG, H.Y. - LIN, Y.C. - HUANG, H.C. Influence of lattice misfit on crack formation during the epitaxy of InyAl1-yN on GaN. In JOURNAL OF ALLOYS AND COMPOUNDS. ISSN 0925-8388, JAN 15 2022, vol. 890. Dostupné na: https://doi.org/10.1016/j.jallcom.2021.161797.
Category	ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	2020
Registered in	WOS
Registered in	SCOPUS
Registered in	CCC
DOI	10.1016/j.apsusc.2019.144086

article

	File name	Access	Size	Downloaded	Type	License
	Radiation hardness limits in gamma spectrometry of semi-insulating GaAs.pdf	Neprístupný/archív	4 MB	1	Publisher's version

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	A

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2020	2019	6.182	Q1	1.230	Q1

Number of the records: 1