Simulation of structure parameters’influence on the threshold voltage of normally-off p-GaN/AlGaN/GaN transistors

Number of the records: 1

Title	Simulation of structure parameters’influence on the threshold voltage of normally-off p-GaN/AlGaN/GaN transistors
Author	Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV ^ORCID
Source document	Physica Status Solidi A : applications and materials science. Vol. 216 (2019), no. 1900453
Language	eng - English
Document kind	rozpis článkov z periodík (rbx)
Citations	DUAN, B.X. - YUAN, J.H. - WANG, Y.D. - YANG, L.Y. - YANG, Y.T. Novel Enhance-Mode AlGaN/GaN JFET With BV of Over 1.2 kV Maintaining Low RON,sp. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, MAR 2022, vol. 69, no. 3, p. 1200-1205. Dostupné na: https://doi.org/10.1109/TED.2022.3145771.
Category	ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	2019
Registered in	WOS
Registered in	SCOPUS
Registered in	CCC
DOI	10.1002/pssa.201900453

article

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	A

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2019	2018	1.606	Q3	0.545	Q2

Number of the records: 1