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Investigation of threshold voltage instabilities in MOS-gated InGaN/AlGaN/GaN HEMTs
Title Investigation of threshold voltage instabilities in MOS-gated InGaN/AlGaN/GaN HEMTs Author Pohorelec Ondrej SAVELEK - Elektrotechnický ústav SAV Co-authors Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV ORCID Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ORCID Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ORCID Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Source document ADEPT 2019 : 7th International Conference on Advances in Electronic and Photonic Technologies. P. 123-126. - Žilina, Slovakia : University of Žilina, 2019 / Jandura D. ; Šušlik Ľ. ; Urbancová P. ; Kováč J., jr. ; ADEPT 2019 7th International Conference on Advances in Electronic and Photonic Technologies Language eng - English Document kind rozpis článkov z periodík (rzb) Category AFD - Published papers from domestic scientific conferences Year 2019 
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rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2019
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