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The effect of Xe ion irradiation on the properties of SiC(P) and SiC(B) film prepared by PECVD technology
Title The effect of Xe ion irradiation on the properties of SiC(P) and SiC(B) film prepared by PECVD technology Author Huran Jozef 1955 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Hrubčín Ladislav 1951 SAVELEK - Elektrotechnický ústav SAV Boháček Pavol 1954 SAVELEK - Elektrotechnický ústav SAV Skuratov V.A. Kleinová Angela 1960- SAVPOLYM - Ústav polymérov SAV ORCID Sasinková Vlasta 1954- SAVCHEM - Chemický ústav SAV Kobzev A.P. Kováčová Eva 1966 SAVELEK - Elektrotechnický ústav SAV Source document ADEPT 2019 : 7th International Conference on Advances in Electronic and Photonic Technologies. P. 155-158. - Žilina, Slovakia : University of Žilina, 2019 / Jandura D. ; Šušlik Ľ. ; Urbancová P. ; Kováč J., jr. ; ADEPT 2019 7th International Conference on Advances in Electronic and Photonic Technologies Language eng - English Document kind rozpis článkov z periodík (rzb) Category AFD - Published papers from domestic scientific conferences Year 2019 
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rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2019
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