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Correlation of threading dislocations with the electron concentration and mobility in InN heteroepitaxial layers grown by MBE
Title Correlation of threading dislocations with the electron concentration and mobility in InN heteroepitaxial layers grown by MBE Author Adikimenakis A. Co-authors Chatzopoulou P. Dimitrakopulos G.P. Kehagias Th. Tsagaraki K. Androulidaki M. Doundoulakis G. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Georgakilas A. Source document ECS Journal of Solid State Science and Technology. Vol. 9 (2020), no. 015006 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations WANG, S.J. - QIN, F.W. - BAI, Y.Z. - ZHANG, D. - ZHANG, J.D. Impact of the Deposition Temperature on the Structural and Electrical Properties of InN Films Grown on Self-Standing Diamond Substrates by Low-Temperature ECR-MOCVD. In COATINGS. DEC 2020, vol. 10, no. 12. LAI, F.I. - YANG, J.F. - LIN, W.T. - CHEN, W.C. - HSU, Y.C. - KUO, S.Y. Correlation of Morphology Evolution with Carrier Dynamics in InN Films Heteroepitaxially Grown by MOMBE. In CATALYSTS. AUG 2021, vol. 11, no. 8. SAKAKITA, H. - KUMAGAI, N. - SHIMIZU, T. - KIM, J. - YAMADA, H. - WANG, X.L. Ammonia-free epitaxy of single-crystal InN using a plasma-integrated gas-injection module. In APPLIED MATERIALS TODAY. ISSN 2352-9407, JUN 2022, vol. 27. Dostupné na: https://doi.org/10.1016/j.apmt.2022.101489. KUDRYAVTSEV, K.E. - LOBANOV, D.N. - KRASILNIKOVA, L.V. - YABLONSKIY, A.N. - YUNIN, P.A. - SKOROKHODOV, E.V. - KALINNIKOV, M.A. - NOVIKOV, A.V. - ANDREEV, B.A. - KRASILNIK, Z.F. Plasma-Assisted Molecular Beam Epitaxy of In-Rich InGaN: Growth Optimization for Near-IR Lasing. In ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. ISSN 2162-8769, JAN 1 2022, vol. 11, no. 1. Dostupné na: https://doi.org/10.1149/2162-8777/ac4d80. FENG, Z.C. - XIE, D. - NAFISA, M.T. - LIN, H.H. - LU, W.J. - CHEN, J.M. - YIIN, J. - CHEN, K.H. - CHEN, L.C. - KLEIN, B. - FERGUSON, I.T. Optical, surface, and structural studies of InN thin films grown on sapphire by molecular beam epitaxy. In JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A. ISSN 0734-2101, SEP 2023, vol. 41, no. 5. Dostupné na: https://doi.org/10.1116/6.0002665. LOO, C.C. - NG, S.S. - YU, H.W. - CHANG, E.Y. - DEE, C.F. - CHANG, W.S. Probing the charge state of threading dislocations in indium nitride through advanced atomic force microscopy. In MATERIALS CHARACTERIZATION. ISSN 1044-5803, NOV 2023, vol. 205. Dostupné na: https://doi.org/10.1016/j.matchar.2023.113279. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2020 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1149/2.0212001JSS article
File name Access Size Downloaded Type License Correlation of threading dislocations with the electron concentration and mobility in InN heteroepitaxial layers grown by MBE.pdf available 886.6 KB 1 Publisher's version rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2020 2019 2.142 Q3 0.521 Q2
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