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A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: A complete depth-resolved investigation
Title A systematic study of MOCVD reactor conditions and Ga memory effect on properties of thick InAl(Ga)N layers: A complete depth-resolved investigation Author Chauhan Prerna SAVELEK - Elektrotechnický ústav SAV Co-authors Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV ORCID Vančo L. Šiffalovič Peter 1975 SAVFYZIK - Fyzikálny ústav SAV ORCID Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV ORCID Machajdík Daniel SAVELEK - Elektrotechnický ústav SAV Rosová Alica 1962 SAVELEK - Elektrotechnický ústav SAV ORCID Gucmann Filip 1987 SAVELEK - Elektrotechnický ústav SAV ORCID Kováč Jaroslav Jr. Maťko Igor 1963 SAVFYZIK - Fyzikálny ústav SAV SCOPUS ORCID Kuball M. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Source document CrystEngComm. Vol. 22, no. 1 (2020), p. 130-141 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations CHEN, Wei-Chun - CHIU, Kun-An - CHEN, Hung-Pin - LIN, Yu-Wei - CHEN, Che-Chin - CHEN, Fong-Zhi. Effects of growth temperature on structural and electrical properties of in-rich InAlN-GaN heterostructures by radio-frequency metal-organic molecular beam epitaxy. In SURFACE TOPOGRAPHY-METROLOGY AND PROPERTIES, 2023, vol. 11, no. 2, pp. ISSN 2051-672X. Dostupné na: https://doi.org/10.1088/2051-672X/acce51. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2020 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1039/c9ce01549c 
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File name Access Size Downloaded Type License A systematic study of MOCVD reactor conditions.pdf Neprístupný/archív 5.7 MB 0 Publisher's version rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2020 2019 3.117 Q2 0.814 Q1
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