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Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure

  1. TitleSemi-insulating GaN for vertical structures: role of substrate selection and growth pressure
    Author Šichman Peter SAVELEK - Elektrotechnický ústav SAV
    Co-authors Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Priesol J.

    Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV

    Gucmann Filip 1987 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Vincze A.

    Chvála A.

    Marek J.

    Šatka A.

    Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Source document Materials science in semiconductor processing. Vol. 118 (2020), no. 105203
    Languageeng - English
    Document kindrozpis článkov z periodík (rbx)
    CitationsPAN, Y. Influence of N-vacancy on the electronic and optical properties of bulk GaN from first-principles investigations. In INTERNATIONAL JOURNAL OF ENERGY RESEARCH. ISSN 0363-907X, AUG 2021, vol. 45, no. 10, p. 15512-15520.
    MOCHIZUKI, K. - HORIKIRI, F. - OHTA, H. - MISHIMA, T. Step-edge segregation model for step-velocity dependences of carbon and oxygen concentrations in GaN layers grown on m-plane GaN. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, JAN 1 2021, vol. 60, no. 1.
    QIN, Y. - ALBANO, B. - SPENCER, J. - LUNDH, J.S. - WANG, B.Y. - BUTTAY, C. - TADJER, M. - DIMARINO, C. - ZHANG, Y.H. Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective. In JOURNAL OF PHYSICS D-APPLIED PHYSICS. ISSN 0022-3727, MAR 2 2023, vol. 56, no. 9. Dostupné na: https://doi.org/10.1088/1361-6463/acb4ff.
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2020
    Registered inWOS
    Registered inSCOPUS
    Registered inCCC
    DOI 10.1016/j.mssp.2020.105203
    article

    article

    File nameAccessSizeDownloadedTypeLicense
    Semi-insulating GaN for vertical structures role of substrate selection and growth.pdfavailable1.4 MB8Author's preprint
    Semi-insulating GaN for vertical.pdfNeprístupný/archív1.2 MB1Publisher's version
    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    202020193.085Q20.665Q1
Number of the records: 1  

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