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MOS2/GAP heterojunction - formation and properties

  1. TitleMOS2/GAP heterojunction - formation and properties
    Author Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Laurenčíková Agáta 1983 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Eliáš Peter 1964 SAVELEK - Elektrotechnický ústav SAV

    Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Sojková Michaela 1980 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Kováč Jaroslav Jr.

    Kováč Jaroslav

    Source document Proceedings of the International Conference on Advances in Electronic and Photonic Technologies. P. 21-24 : ADEPT 2020. - Slovakia : University of Zilina in EDIS-Publishing Centre of UZ, 2020 / Kováč, jr. J. ; Chymo F. ; Feiler M. ; Jandura D. ; International Conference on Advances in Electronic and Photonic Technologies (ADPET 2020)
    Languageeng - English
    Document kindrozpis článkov z periodík (rzb)
    CategoryAFD - Published papers from domestic scientific conferences
    Year2020
    article

    article

    File nameAccessSizeDownloadedTypeLicense
    MOS2 GAP heterojunction formation and properties.pdfavailable1.2 MB0Publisher's version
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    2020
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