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Current understanding of bias-temperature instabilities in GaN MIS transistors for power switching applications
Title Current understanding of bias-temperature instabilities in GaN MIS transistors for power switching applications Author Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV ORCID Source document Crystals. Vol. 10 (2020), no. 1153 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations ADAMOWICZ, Boguslawa. Characterization of interface states at oxide/GaN(AlGaN) interfaces using illumination. In IMFEDK 2021 2021 International Meeting for Future of Electron Devices, Kansai, 2021-01-01, pp. Dostupné na: https://doi.org/10.1109/IMFEDK53601.2021.9637620. MINETTO, A. - MODOLO, N. - MENEGHINI, M. - ZANONI, E. - SAYADI, L. - SICRE, S. - DEUTSCHMANN, B. - HABERLEN, O. Hot electron effects in AlGaN/GaN HEMTs during hard-switching events. In MICROELECTRONICS RELIABILITY. ISSN 0026-2714, NOV 2021, vol. 126, SI. MINETTO, A. - MODOLO, N. - SAYADI, L. - KOLLER, C. - OSTERMAIER, C. - MENEGHINI, M. - ZANONI, E. - PRECHTL, G. - SICRE, S. - DEUTSCHMANN, B. - HABERLEN, O. Drain Field Plate Impact on the Hard-Switching Performance of AlGaN/GaN HEMTs. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, OCT 2021, vol. 68, no. 10, p. 5003-5008. BALLESTIN-FUERTES, J. - MUNOZ-CRUZADO-ALBA, J. - SANZ-OSORIO, J.F. - LAPORTA-PUYAL, E. Role of Wide Bandgap Materials in Power Electronics for Smart Grids Applications. In ELECTRONICS. MAR 2021, vol. 10, no. 6. KAMMEUGNE, R. Kom - THEODOROU, C. - LEROUX, C. - MESCOT, X. - VAUCHE, L. - GWOZIECKI, R. - BECU, S. - CHARLES, M. - BANO, E. - GHIBAUDO, G. Thorough Investigation of Low Frequency Noise Mechanisms in AlGaN/GaN and Al2O3/GaN HEMTs. In 2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2021, vol., no., pp. ISSN 2380-9248. Dostupné na: https://doi.org/10.1109/IEDM19574.2021.9720522. ELANGOVAN, Surya - CHENG, Stone - YAO, Jia Hao - CHANG, Edward Yi. VinfTH/inf& Ginfm, max/infInstability Analysis of the Multiple GaN Chips based Cascode Power Module. In Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 2022-01-01, 2022-July, pp. Dostupné na: https://doi.org/10.1109/IPFA55383.2022.9915768. BENJELLOUN, Mohammed - AL TARADEH, Nedal - RODRIGUEZ, Christophe - GOGNEAU, Noelle - SOLTANI, Ali - MORRIS, Denis - HARMAND, Jean Christophe - MAHER, Hassan. Design and Optimization of New Enhanced Vertical GaN Nanowire Transistor Using Sentaurus TCAD for Power Applications. In 2022 Compound Semiconductor Week, CSW 2022, 2022-01-01, pp. Dostupné na: https://doi.org/10.1109/CSW55288.2022.9930376. MISHRA, Girish Shankar - MOHANKUMAR, N. - SINGH, Sankalp Kumar - VAMSI, M. - REDDY, Dola Sainath. CV Analysis and Linearity Performance of InGaN Notch Dielectric Modulated Dual Channel GaN MOSHEMT for Reliable Label-free Biosensing. In Proceedings of 2022 IEEE International Conference of Electron Devices Society Kolkata Chapter, EDKCON 2022, 2022-01-01, pp. 235-240. Dostupné na: https://doi.org/10.1109/EDKCON56221.2022.10032882. GUNAYDIN, Y. - JAHDI, S. - YUAN, X.B. - YANG, J.F. - YU, R.Z. - STARK, B. Impact of Electrothermal Bias Temperature Instability Stress on Threshold Voltage Drift of GaN Cascode Power Modules. In 2022 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN EUROPE (WIPDA EUROPE). 2022. Dostupné na: https://doi.org/10.1109/WIPDAEUROPE55971.2022.9936254. WALTL, M. Editorial for the Special Issue on Robust Microelectronic Devices. In CRYSTALS. JAN 2022, vol. 12, no. 1. Dostupné na: https://doi.org/10.3390/cryst12010016. ZHANG, Y. - XU, L.H. - GU, Y.T. - GUO, H.W. - JIANG, H.X. - LAU, K.M. - ZOU, X.B. Dynamic Characteristics of GaN MISHEMT With 5-nm In-Situ SiNx Dielectric Layer. In IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. ISSN 2168-6734, 2022, vol. 10, p. 540-546. Dostupné na: https://doi.org/10.1109/JEDS.2022.3189819. ZHAO, Xiaoliang - SHU, Penghuai - LI, Wei - WANG, Zhenyu - ZHANG, Xiaobin. The Embedded Cooling Silicon 3D Stacking Thermal Test Vehicle. In InterSociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems, ITHERM, 2023-01-01, 2023-May, pp. ISSN 19363958. Dostupné na: https://doi.org/10.1109/ITherm55368.2023.10177502. NGUYEN, D.D. - DENG, Y.C. - SUZUKI, T.K. Low-frequency noise in AlTiO/AlGaN/GaN metal-insulator-semiconductor field-effect transistors with non-gate-recessed or partially-gate-recessed structures. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, SEP 1 2023, vol. 38, no. 9. Dostupné na: https://doi.org/10.1088/1361-6641/acec64. IROKAWA, Y. - MITSUISHI, K. - IZUMI, T. - NISHII, J. - NABATAME, T. - KOIDE, Y. Gate-Bias-Induced Threshold Voltage Shifts in GaN FATFETs. In ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY. ISSN 2162-8769, MAY 1 2023, vol. 12, no. 5. Dostupné na: https://doi.org/10.1149/2162-8777/acd1b4. SUN, Q. - LIAO, F.B. - XIE, Y.F. - LI, J.L. - LIAN, M.X. - ZHANG, X.C. - ZHANG, K.M. - ZOU, B.Z. - YIN, Y. 2.2 kV breakdown voltage GaN double-channel Schottky barrier diode with one grading-AlGaN barrier and polarization junction. In MICRO AND NANOSTRUCTURES. JUN 2023, vol. 178. Dostupné na: https://doi.org/10.1016/j.micrna.2023.207562. KUO, H.M. - CHANG, T.C. - CHANG, K.C. - LIN, H.N. - KUO, T.T. - YEH, C.H. - LEE, Y.H. - LIN, J.H. - TSAI, X.Y. - HUANG, J.W. - SZE, S. Investigation of Threshold Voltage and Drain Current Degradations in Sisub3/subNsub4/sub/AlGaN/GaN MIS-HEMTs Under X-Ray Irradiation. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, MAY 2023, vol. 70, no. 5, p. 2216-2221. Dostupné na: https://doi.org/10.1109/TED.2023.3255829. BENJELLOUN, M. - ZAIDAN, Z.H. - SOLTANI, A. - GOGNEAU, N. - MORRIS, D. - HARMAND, J.C. - MAHER, H.M. Design, Simulation and Optimization of an Enhanced Vertical GaN Nanowire Transistor on Silicon Substrate for Power Electronic Applications. In IEEE ACCESS. ISSN 2169-3536, 2023, vol. 11, p. 40249-40257. Dostupné na: https://doi.org/10.1109/ACCESS.2023.3248630. KAMMEUGNE, R.K. - THEODOROU, C. - LEROUX, C. - VAUCHE, L. - MESCOT, X. - GWOZIECKI, R. - BECU, S. - CHARLES, M. - BANO, E. - GHIBAUDO, G. New insights into low frequency noise (LFN) sources analysis in GaN/Si MIS-HEMTs. In SOLID-STATE ELECTRONICS. ISSN 0038-1101, FEB 2023, vol. 200. Dostupné na: https://doi.org/10.1016/j.sse.2022.108555. NELSON, M. - BARZEGAR, V. - LAFLAMME, S. - HU, C. - DOWNEY, A.R.J. - BAKOS, J.D. - THELEN, A. - DODSON, J. Multi-step ahead state estimation with hybrid algorithm for high-rate dynamic systems. In MECHANICAL SYSTEMS AND SIGNAL PROCESSING. ISSN 0888-3270, JAN 1 2023, vol. 182. Dostupné na: https://doi.org/10.1016/j.ymssp.2022.109536. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2020 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.3390/cryst10121153 
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File name Access Size Downloaded Type License Current understanding of bias-temperature instabilities in GaN MIS transistors for power switching applications.pdf available 4.5 MB 0 Publisher's version rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2020 2019 2.404 Q2 0.594 Q2
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