Device and circuit models of monolithic InAlN/GaN NAND and NOR logic cells comprising D- and E-mode HEMTs

Number of the records: 1

Title	Device and circuit models of monolithic InAlN/GaN NAND and NOR logic cells comprising D- and E-mode HEMTs
Author	Chvála A.
Co-authors	Nagy L.
	Marek J.
	Priesol J.
	Donoval D.
	Šatka A.
	Blaho Michal 1983 SAVELEK - Elektrotechnický ústav SAV
	Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ^ORCID

Source document	Journal of Circuits, Systems and Computers : Special Issue on Design, Technology, and Test of Integrated Circuits and Systems. Vol. 19 (2019), no. 1940009
Language	eng - English
Document kind	rozpis článkov z periodík (rbx)
Citations	LV, Z.H. - XU, Z.W. - SONG, C.Y. A compact model for dual-gate GaAs PHEMT and application for power amplifier design. In IEICE ELECTRONICS EXPRESS. ISSN 1349-2543, OCT 25 2021, vol. 18, no. 20.
Category	ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	2019
Registered in	WOS
Registered in	SCOPUS
Registered in	CCC
DOI	10.1142/S0218126619400097

article

	File name	Access	Size	Downloaded	Type	License
	Device and Circuit Models of Monolithic InAlN.pdf	Neprístupný/archív	1.2 MB	0	Publisher's version

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	A

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2019	2018	0.939	Q4	0.220	Q3

Number of the records: 1