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Enhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors

  1. TitleEnhancement of channel electric field in AlGaN/GaN multi-nanochannel high electron mobility transistors
    Author Matys M.
    Co-authors Nishiguchi K.

    Adamowicz J.B.

    Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Hashizume T.

    Source document Journal of Applied Physics. Vol. 124 (2018), no. 224502
    Languageeng - English
    Document kindrozpis článkov z periodík (rbx)
    CitationsMAZUMDER, S. - WU, Z.G. - PAN, P.C. - LI, S.H. - WANG, Y.H. DC performance improvement of nanochannel AlGaN/AlN/GaN HEMTs with reduced OFF-state leakage current by post-gate annealing modulation. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, SEP 2021, vol. 36, no. 9.
    GLINKOWSKI, M. - PASZKIEWICZ, B. - PASZKIEWICZ, R. Influence of High Electric Field on Operation of AlGaN/AlN/GaN High Electron Mobility Transistor. In ACTA PHYSICA POLONICA A. ISSN 0587-4246, AUG 2021, vol. 140, no. 2, p. 192-196.
    SON, D.H. - THINGUJAM, T. - DAI, Q. - KIM, J.G. - CRISTOLOVEANU, S. - LEE, J.H. Fabrication and characterization of GaN-based nanostructure field effect transistors. In SOLID-STATE ELECTRONICS. ISSN 0038-1101, OCT 2021, vol. 184.
    WANG, A.S. - ZENG, L.Y. - WANG, W. Strain relaxation and self-heating effects of fin AlGaN/GaN HEMTs. In SEMICONDUCTOR SCIENCE AND TECHNOLOGY. ISSN 0268-1242, MAR 1 2023, vol. 38, no. 3. Dostupné na: https://doi.org/10.1088/1361-6641/acb8d4.
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2018
    Registered inWOS
    Registered inSCOPUS
    Registered inCCC
    DOI 10.1063/1.5056194
    article

    article

    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    201820172.176Q20.739Q2
Number of the records: 1  

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