Properties of Si-SiO2 Interfaces in MOS structures with nitrogen-doped silicon

Number of the records: 1

Title	Properties of Si-SiO2 Interfaces in MOS structures with nitrogen-doped silicon
Author	Harmatha L.
Co-authors	Ballo P.
	Breza J.
	Písečný Pavol SAVELEK - Elektrotechnický ústav SAV
	Ťapajna Milan 1977 ^ORCID

Source document	Advances in Electrical and Electronic Engineering. Vol. 5 (2006), p. 334-336
Language	eng - English
Document kind	rozpis článkov z periodík (rbx)
Citations	CIBIRA, G. Silicon Resistivity Behaviour. In ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING. ISSN 1336-1376, JUN 2021, vol. 19, no. 2, p. 179-185.
Category	ADFB - Scientific papers in other domestic journals not registered in Current Contents Connect without IF (non-impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	2006

article

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	N

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2006

Number of the records: 1