Temperature dependence of electrical behaviour of inhomogeneous Ni/Au/4H–SiC Schottky diodes

Number of the records: 1

Title	Temperature dependence of electrical behaviour of inhomogeneous Ni/Au/4H–SiC Schottky diodes
Author	Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV ^ORCID
Co-authors	Hrubčín Ladislav 1951 SAVELEK - Elektrotechnický ústav SAV
	Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV ^ORCID

Source document	Materials science in semiconductor processing. Vol. 140 (2022), no. 106413
Language	eng - English
Country	GB - Great Britian
Document kind	rozpis článkov z periodík (rbx)
Citations	DENIZ, A.R. - CALDIRAN, Z. - TASYUREK, L.B. Electrical characteristics of Al2O3/p-Si heterojunction diode and effects of radiation on the electrical properties of this diode. In JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. ISSN 0957-4522, DEC 2022, vol. 33, no. 36, p. 26954-26965. Dostupné na: https://doi.org/10.1007/s10854-022-09359-3.
Category	ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	2022
Registered in	WOS
Registered in	SCOPUS
Registered in	CCC
DOI	10.1016/j.mssp.2021.106413

article

	Názov súboru	Prístup	Veľkosť	Stiahnuté	Typ	Licence
	Temperature dependence of electrical behaviour of inhomogeneous NiAu.pdf	Neprístupný/archív	2.4 MB	2	Vydavateľská verzia

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	A

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2022	2021	4.644	Q2	0.687	Q1

Number of the records: 1