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Investigation of a nanostructured GaP/MoS2 p-n heterojunction photodiode

  1. TitleInvestigation of a nanostructured GaP/MoS2 p-n heterojunction photodiode
    Author Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Laurenčíková Agáta 1983 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Eliáš Peter 1964 SAVELEK - Elektrotechnický ústav SAV

    Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Sojková Michaela 1980 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Kováč Jaroslav Jr.

    Kováč Jaroslav

    Source document AIP Advances. Vol. 12 (2022), no. 065004
    Languageeng - English
    CountryUS - United States of America
    Document kindrozpis článkov z periodík (rbx)
    CitationsLATE, D.J. - WIEMER, C. Advances in low dimensional and 2D materials. In AIP ADVANCES. NOV 1 2022, vol. 12, no. 11. Dostupné na: https://doi.org/10.1063/5.0129120.
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2022
    Registered inWOS
    Registered inCCC
    DOI 10.1063/5.0089842
    article

    article

    File nameAccessSizeDownloadedTypeLicense
    Investigation of a nanostructured GaP.pdfavailable4.6 MB2Publisher's version
    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    202220211.697Q30.375Q3
Number of the records: 1  

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