Growth of N-polar In-rich InAlN by metal organic chemical vapor deposition on on- and off-axis sapphire

Number of the records: 1

Title	Growth of N-polar In-rich InAlN by metal organic chemical vapor deposition on on- and off-axis sapphire
Author	Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV ^ORCID
Co-authors	Blaho Michal 1983
	Dobročka Edmund 1955 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Gucmann Filip 1987 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Kučera Michal 1956 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Nádaždy Peter 1990 SAVELEK - Elektrotechnický ústav SAV
	Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Rosová Alica 1962 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ^ORCID

Source document	Materials science in semiconductor processing. Vol. 156 (2023), no. 107290
Language	eng - English
Country	GB - Great Britian
Document kind	rozpis článkov z periodík (rbx)
Category	ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	2023
Registered in	WOS
Registered in	SCOPUS
Registered in	CCC
DOI	10.1016/j.mssp.2022.107290

article

	File name	Access	Size	Downloaded	Type	License
	Growth of N-polar In-rich InAlN by metal organic chemical vapor deposition on on- and off-axis sapphire.pdf	Neprístupný/archív	3.9 MB	1	Publisher's version

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	A

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2023	2022	4.1	Q2	0.688	Q1

Number of the records: 1