Number of the records: 1  

Influence of thin Ga2Se3 interlayer on the properties of GaP/PtSe2 heterojunction

  1. TitleInfluence of thin Ga2Se3 interlayer on the properties of GaP/PtSe2 heterojunction
    Author Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV
    Co-authors Eliáš Peter 1964 SAVELEK - Elektrotechnický ústav SAV

    Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Sojková Michaela 1980 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Laurenčíková Agáta 1983 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Kováč J., jr. SAVELEK - Elektrotechnický ústav SAV

    Kováč J. SAVELEK - Elektrotechnický ústav SAV

    Source document Proceedings of ADEPT 2023 : 11th International Conference on Advances in Electronic and Photonic Technologies, held in Podbanské, High Tatras, Slovakia, June 12th – 15th, 2023. P. 24-27. - Žilina : University of Zilina in EDIS-Publishing Centre of UZ, 2023 / Jandura D. ; Lettrichová I. ; Kováč J., jr.
    Languageeng - English
    CountrySK - Slovak Republic
    Document kindrozpis článkov z periodík (rzb)
    CategoryAFD - Published papers from domestic scientific conferences
    Category of document (from 2022)V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    Type of documentpríspevok z podujatia
    Year2023
    article

    article

    File nameAccessSizeDownloadedTypeLicense
    Influence of thin Ga2Se3 interlayer on the properties of GaPPtSe2 heterojunction.pdfavailable806.6 KB0Publisher's version
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    2023
Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.