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3D thermal simulation of GaAs-based HEMT on foreign substrates

  1. Title3D thermal simulation of GaAs-based HEMT on foreign substrates
    Author Chvála A.
    Co-authors Kováč Jaroslav

    Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Gucmann Filip 1987 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Marek Ján

    Florovič M.

    Source document Microelectronic Devices and Technologies : Proceedings of the 5th International Conferenceon Microelectronic Devices and Technologies (MicDAT '2023). 20-22 September 2023, Funchal (Madeira Island), Portugal. P. 20-23. - Barcelona : IFSA Publishing, 2023 / Yurish S.Y.
    Languageeng - English
    CountryES - Spain
    Document kindrozpis článkov z periodík (rzb)
    CategoryAFC - Published papers from foreign scientific conferences
    Category of document (from 2022)V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    Type of documentpríspevok z podujatia
    Year2023
    article

    article

    File nameAccessSizeDownloadedTypeLicense
    3D Thermal Simulation of GaAs-Based HEMT on Foreign Substrates.pdfNeprístupný/archív8.7 MB0Publisher's version
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    2023
Number of the records: 1  

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