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Modeling the flexoelectric effect in semiconductors via a second-order collocation MFEM
Title Modeling the flexoelectric effect in semiconductors via a second-order collocation MFEM Author Tian Xinpeng Co-authors Zhou Haiyang Deng Qian Yan Zhi Sládek Ján SAVSTAV - Ústav stavebníctva a architektúry SAV RID ORCID Sládek Vladimír SAVSTAV - Ústav stavebníctva a architektúry SAV Source document International Journal of Mechanical Sciences. Vol. 264 (2024), art. no. 108837, 15 p. Language eng - English Country GB - Great Britian Document kind rozpis článkov z periodík (rbx) Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2024 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1016/j.ijmecsci.2023.108837 article
File name Access Size Downloaded Type License Modeling the flexoelectric effect in semiconductors via a second-order collocation MFEM.pdf Neprístupný/archív 2.1 MB 2 Publisher's version rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2024 2023 7.1 Q1 1.65 Q1
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