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Electrical properties study of the 4H-SiC detectors based on thick epitaxial layer

  1. TitleElectrical properties study of the 4H-SiC detectors based on thick epitaxial layer
    Author Šagátová A.
    Co-authors Hrubčín Ladislav 1951 SAVELEK - Elektrotechnický ústav SAV

    Kurucová N.

    Nečas V.

    Kováčová Eva 1966 SAVELEK - Elektrotechnický ústav SAV

    Evseev S.A.

    Zaťko Bohumír 1973 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Source document AIP Conference Proceedings : Applied Physics of Condensed Matter (APCOM 2023). Vol. 3054 (2024), no. 050011
    Languageeng - English
    CountryUS - United States of America
    Document kindrozpis článkov z periodík (rbx)
    CategoryADMB - Scientific papers in foreign non-impacted journals registered in Web of Sciences or Scopus
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok z podujatia
    Year2024
    Registered inSCOPUS
    DOI 10.1063/5.0187794
    article

    article

    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    N
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    202420230.152
Number of the records: 1  

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