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Optical properties of Si-, and Zn-, doped epitaxial layers of InP grown by MOCVD on Fe- doped semi-insulating InP substrates

  1. TitleOptical properties of Si-, and Zn-, doped epitaxial layers of InP grown by MOCVD on Fe- doped semi-insulating InP substrates
    Author Mudroň J.
    Co-authors Müllerová J.

    Csabay O.

    Dubecký František 1946 SAVELEK - Elektrotechnický ústav SAV

    Euthymiou P.

    Harmatha L.

    Zardas E.

    Source document APCOM 2000 : Proceedings of the 6th International Workshop on Applied Physics of Condensed Matter. P. 80-83 / Mudroň J. ; Šutta P. ; Vajda J. ; Barančok Drahoslav. - Liptovský Mikuláš : Military Academy, 2000
    Languageeng - English
    CountrySK - Slovak Republic
    Document kindrozpis článkov z periodík (rzb)
    CategoryAED - Scientific papers in domestic peer-reviewed proceedings, monographs
    Category of document (from 2022)V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    Type of documentpríspevok
    Year2000
    article

    article

    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    2000
Number of the records: 1  

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