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Fabrication of open stencil masks with asymmetric void ratio for the ion projection lithography space charge experiment
Title Fabrication of open stencil masks with asymmetric void ratio for the ion projection lithography space charge experiment Author Volland B. Co-authors Shi F. Heerlein H. Rangelow I.W. Hudek Peter 1953- SAVINFO - Ústav informatiky SAV SCOPUS RID ORCID Kostič Ivan 1955- SAVINFO - Ústav informatiky SAV SCOPUS RID ORCID Cekan E. Vonach H. Loeschner Hans Horner C. Stengl G. Buschbeck H. Zeininger M. Bleeker A. Benschop J. Source document Journal of Vacuum Science and Technology B. Vol. 18, no. 6 (2000), p. 3202-3206 Language eng - English Country US - United States of America Document kind rozpis článkov z periodík (rbx) Citations SOHDA, Y - OHTA, H - SAITOU, N. A method for evaluating aberration in the crossover image in mask irradiation optics of electron beam. In REVIEW OF SCIENTIFIC INSTRUMENTS. ISSN 0034-6748, 2002, vol. 73, no. 2, pp. 270. KASSING, Rainer. Semiconductor. In FESTKORPER, 2005, vol., no., pp. 543. TSENG, AA. Recent developments in nanofabrication using ion projection lithography. In SMALL. ISSN 1613-6810, 2005, vol. 1, no. 6, pp. 594. TSENG, Ampere A. - DU, Zuliang - NOTARGIACOMO, Andrea - JOU, Shyankay. Nanoscale fabrication. In Microsystems and Nanotechnology, 2012-08-01, 9783642182938, pp. 513-577. Category ADC Year 2000 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1116/1.1319688 article
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2000 1999 1.690
Number of the records: 1