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On ultra-thin oxide/Si and very-thin oxide/Si structures prepared by wet chemical process
Title On ultra-thin oxide/Si and very-thin oxide/Si structures prepared by wet chemical process Author Pinčík Emil 1956 SAVFYZIK - Fyzikálny ústav SAV ORCID Co-authors Kobayashi H. Rusnák Jaroslav 1958 SAVFYZIK - Fyzikálny ústav SAV ORCID Kim W.B. Brunner Róbert 1954 SAVFYZIK - Fyzikálny ústav SAV Malinovský Ľudovít 1956 SAVFYZIK - Fyzikálny ústav SAV Matsumoto T. Imamura K. Jergel Matej 1954- SAVFYZIK - Fyzikálny ústav SAV SCOPUS RID ORCID Takahashi M. Higashi Y. Kučera Michal 1956 SAVELEK - Elektrotechnický ústav SAV ORCID Mikula M. Source document Applied Surface Science. Vol. 256, no. 19 (2010), p. 5757-5764 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations ANGERMANN, H. - GREF, O. - STEGEMANN, B. Effect of wet-chemical substrate smoothing on passivation of ultrathin-SiO2/n-Si(111) interfaces prepared with atomic oxygen at thermal impact energies. In Central European Journal of Physics, 2011, vol.9, no.6, 1472-1481. BORDIHN, S. - ENGELHART, P. - MERTENS, V. - KESSER, G. - KÖHN, D. - DINGEMANS, G. - MANDOC, M.M. - MÜLLER, J.W. - KESSELS, W.M.M. High surface passivation quality and thermal stability of ALD Al 2O3 on wet chemical grown ultra-thin SiO2 on silicon. In Energy Procedia, 2011, vol.8, 654-659. ANGERMANN, H. - WOLKE, K. - GOTTSCHALK, C. - MOLDOVAN, A. - ROCZEN, M. - FITTKAU, J. - ZIMMER, M. - RENTSCH, J. Electronic interface properties of silicon substrates after ozone based wet-chemical oxidation studied by SPV measurements. In APPLIED SURFACE SCIENCE. AUG 15 2012, vol. 258, no. 21, p. 8387-8396. ANGERMANN, H. Conditioning of Si-interfaces by wet-chemical oxidation: Electronic interface properties study by surface photovoltage measurements. In APPLIED SURFACE SCIENCE. SEP 1 2014, vol. 312, p. 3-16. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2010 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1016/j.apsusc.2010.03.096 
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rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2010 2009 1.616 Q2 0.840 Q1
Number of the records: 1