Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor

Number of the records: 1

Title	Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor
Author	Lalinský Tibor 1951 SAVELEK - Elektrotechnický ústav SAV
Co-authors	Vanko Gabriel 1981 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Vallo Martin SAVELEK - Elektrotechnický ústav SAV
	Držík Milan
	Bruncko J.
	Jakovenko J.
	Kutiš V.
	Rýger Ivan 1987 SAVELEK - Elektrotechnický ústav SAV
	Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV
	Husák M.

Source document	Sensors and Actuators A. Vol. 172, (2011), p. 386-391
Language	eng - English
Document kind	rozpis článkov z periodík (rbx)
Citations	WANG, C. - ZHANG, K. - HE, Y.L. - ZHENG, X.F. - MA, X.H. - ZHANG, J.C. - HAO, Y. In CHINESE PHYSICS LETTERS. DEC 2014, vol. 31, no. 12.
Category	ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	2011
Registered in	WOS
Registered in	SCOPUS
Registered in	CCC
DOI	10.1016/j.sna.2011.09.028

article

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	A

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2011	2010	3.370	Q1	1.434	Q1

Number of the records: 1