Number of the records: 1
Non-arrhenius degradation of AlGaN/GaN HEMTs grown on bulk GaN substrates
Title Non-arrhenius degradation of AlGaN/GaN HEMTs grown on bulk GaN substrates Author Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV ORCID Co-authors Killat N. Moereke J. Paskova T. Evans Kevin R. Leach J. Li X. Ozgur U. Morkoc H. Chabak K.D. Crespo A. Gillespie J.K. Fitch R. Kossler M. Walker D.E. Trejo M. Via G.D. Blevins J.D. Kuball M. Source document IEEE Electron Devices Letters. Vol. 33, (2012), p. 1126-1128 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations ZANONI, E. - MENEGHINI, M. - CHINI, A. - MARCON, D. - MENEGHESSO, G. In IEEE TRANSACTIONS ON ELECTRON DEVICES. OCT 2013, vol. 60, no. 10, SI, p. 3119-3131. STOCCO, A. - DALCANALE, S. - RAMPAZZO, F. - MENEGHINI, M. - MENEGHESSO, G. - GRUNENPUTT, J. - LAMBERT, B. - BLANCK, H. - ZANONI, E. In MICROELECTRONICS RELIABILITY. SEP-OCT 2014, vol. 54, no. 9-10, SI, p. 2237-2241. Janke, W., Wojtasiak, W. Przeglad Elektrotechniczny 91 (2015), pp. 65-73 MENEGHINI, M. - MENEGHESSO, G. - ZANONI, E. In GALLIUM NITRIDE (GAN): PHYSICS, DEVICES, AND TECHNOLOGY. 2016, vol. 47, p. 327-361. MENEGHINI, M. - BARBATO, A. - ROSSETTO, I. - FAVARON, A. - SILVESTRI, M. - LAVANGA, S. - SUN, H.F. - BRECH, H. - MENEGHESSO, G. - ZANONI, E. In IEEE TRANSACTIONS ON ELECTRON DEVICES. MAR 2017, vol. 64, no. 3, p. 1032-1037. MENEGHESSO, G. - MENEGHINI, M. - DE SANTI, C. - RUZZARIN, M. - ZANONI, E. Positive and negative threshold voltage instabilities in GaN-based transistors. In MICROELECTRONICS RELIABILITY. JAN 2018, vol. 80, p. 257-265. ZHANG, D.L. - CHENG, X.H. - NG, W.T. - SHEN, L.Y. - ZHENG, L. - WANG, Q. - QIAN, R. - GU, Z.Y. - WU, D.P. - ZHOU, W. - ZHU, H.Y. - YU, Y.H. Reliability Improvement of GaN Devices on Free-Standing GaN Substrates. In IEEE TRANSACTIONS ON ELECTRON DEVICES. AUG 2018, vol. 65, no. 8, p. 3379-3387. VORONENKOV, Vladislav V. - LELIKOV, Yuri S. - ZUBRILOV, Andrey S. - SHRETER, Yuri G. - LEONIDOV, Andrey A. Thick GaN Film Stress-induced Self-separation. In PROCEEDINGS OF THE 2019 IEEE CONFERENCE OF RUSSIAN YOUNG RESEARCHERS IN ELECTRICAL AND ELECTRONIC ENGINEERING (EICONRUS). ISSN 2376-6557, 2019, vol., no., pp. 833-837. HAMZA, K.H. - NIRMAL, D. - ARIVAZHAGAN, L. Impact of AlGaN Back Barrier in AlGaN/GaN HEMT on GaN substrate. In 2020 5TH INTERNATIONAL CONFERENCE ON DEVICES, CIRCUITS AND SYSTEMS (ICDCS' 20). ISSN 2470-847X, 2020, p. 290-293. TANAKA, A. - SUGIURA, R. - KAWAGUCHI, D. - WANI, Y. - WATANABE, H. - SENA, H. - ANDO, Y. - HONDA, Y. - IGASAKI, Y. - WAKEJIMA, A. - ANDO, Y. - AMANO, H. Laser slice thinning of GaN-on-GaN high electron mobility transistors. In SCIENTIFIC REPORTS. ISSN 2045-2322, MAY 5 2022, vol. 12, no. 1. Dostupné na: https://doi.org/10.1038/s41598-022-10610-4. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2012 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1109/LED.2012.2199278 
article
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2012 2011 2.849 Q1 2.382 Q1
Number of the records: 1