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Technology of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics
Title Technology of integrated self-aligned E/D-mode n++GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics Author Blaho Michal 1983 SAVELEK - Elektrotechnický ústav SAV Co-authors Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ORCID Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV Seifertová Alena 1958 SAVELEK - Elektrotechnický ústav SAV Ťapajna Milan 1977 SAVELEK - Elektrotechnický ústav SAV ORCID Šoltýs Ján 1977 SAVELEK - Elektrotechnický ústav SAV ORCID Šatka A. Nagy L. Chvála A. Marek J. Carlin J.-F. Grandjean N. Konstantinidis G. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Source document Semiconductor Science and Technology. Vol. 31 (2016), no. 065011 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations KUMAR, S. - ALI, M. - KUMAR, R. - MITRA, R. - KUNDU, A. - KAR, M. Impact of Source and Drain Underlap on Analog Performance of Double-Gate AlGaN/GaN MOS-HEMT. In 2020 IEEE CALCUTTA CONFERENCE (CALCON). 2020, p. 378-381. HOFSTETTER, D. - AKU-LEH, C. - BECK, H. - BOUR, D.P. AlGaN-Based 1.55 mu m Phototransistor as a Crucial Building Block for Optical Computers. In CRYSTALS. NOV 2021, vol. 11, no. 11. Lee, D., An, J.Y., Lee, C.-H., Bong, K.W., Kim, J.:Normally off WSe2Nanosheet-Based Field-Effect Transistors with Self-Aligned Contact Doping In ACS Applied Nano MaterialsVolume 5, (2022) 18462 Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2016 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1088/0268-1242/31/6/065011 
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File name Access Size Downloaded Type License Technology of integrated self-aligned.pdf Neprístupný/archív 1.1 MB 1 Publisher's version rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2016 2015 2.098 Q2 0.844 Q1
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