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Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer
Title Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer Author Mikulics M. Co-authors Kordoš Peter SAVELEK - Elektrotechnický ústav SAV Gregušová Dagmar 1958 SAVELEK - Elektrotechnický ústav SAV ORCID Gaži Štefan 1948 SAVELEK - Elektrotechnický ústav SAV Novák Jozef 1951 SAVELEK - Elektrotechnický ústav SAV Sofer Z. Mayer J. Hartdegen H. Source document Semiconductor Science and Technology. Vol. 36 (2021), no. 095040 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations BHARDWAJ, N. - UPADHYAY, B.B. - YADAV, Y.K. - SURAPANENI, S. - GANGULY, S. - SAHA, D. Thermally grown Nb-oxide for GaN-based MOS-diodes. In APPLIED SURFACE SCIENCE. ISSN 0169-4332, JAN 15 2022, vol. 572. Dostupné na: https://doi.org/10.1016/j.apsusc.2021.151332. Liu, Y., Chen, S., Cheng, Z., Wang, T., Huang, C., Jiang, G., Zhang, H., Cai, Y.: Temperature dependence of the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN HFETs In Micro and NanostructuresVolume 164 (2022) Article number 107160. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2021 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1088/1361-6641/ac1a28 
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File name Access Size Downloaded Type License Local increase in compressive strain (GaN) in gate recessed AlGaNGaN MISHFET structures induced by an amorphous AlN dielectric layer.pdf available 2.7 MB 0 Publisher's version rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2021 2020 2.352 Q3 0.712 Q1
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