Identification of electrically stressed regions in AlGaN/GaN-on-Si Schottky barrier diode using EBIC technique

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Title	Identification of electrically stressed regions in AlGaN/GaN-on-Si Schottky barrier diode using EBIC technique
Author	Priesol J.
Co-authors	Šatka Alexander 1960 SAVMER - Ústav merania SAV ^SCOPUS ^RID ^ORCID
	Chvála A.
	Stoffels S.
	De Jaeger B.
	Decoutere S.

Source document	IEEE Transactions on Electron Devices. Vol. 68, no. 1 (2021), p. 216-221
Language	eng - English
Country	US - United States of America
Document kind	rozpis článkov z periodík (rbx)
Category	ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	2021
Registered in	WOS
Registered in	SCOPUS
Registered in	CCC
DOI	10.1109/TED.2020.3039756

article

	File name	Access	Size	Downloaded	Type	License
	Identification of electrically stressed regions.pdf	Neprístupný/archív	2 MB	1	Publisher's version

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	A

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2021	2020	2.917	Q2	0.828	Q1

Number of the records: 1