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Delta-doped layer influence on Schottky diodes parameters

  1. TitleDelta-doped layer influence on Schottky diodes parameters
    Author Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV    ORCID
    Source document / Osvald Jozef 1953 ; Haščík Štefan 1956 ; Kuzmík Ján 1960 ; Breza J. . P. 391-394 ASDAM 2000 : 3rd International EuroConference on Advanced Semiconductor Devices and Microsystems. - Piscataway : IEEE, 2000
    Languageeng - English
    CountryUS - United States of America
    Document kindrozpis článkov z periodík (rzb)
    CitationsCHIU, H.C. - CHEN, C.W. - HUANG, Y.C. In IEEE TRANSACTIONS ON ELECTRON DEVICES. JAN 2008, vol. 55, no. 1, p. 256-260.
    CategoryAEC - Scientific papers in foreign peer-reviewed proceedings, monographs
    Category of document (from 2022)V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    Type of documentpríspevok
    Year2000
    article

    article

    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    2000
Number of the records: 1  

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