Number of the records: 1
Study of Si implantation into Mg-doped GaN for MOSFETs
Title Study of Si implantation into Mg-doped GaN for MOSFETs Author Ostermaier C. Co-authors Ahn S.-I. Potzger K. Helm M. Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ORCID Pogany D. Strasser G. Lee J.-H. Hahm S.-H. Lee Jung-Hee Source document Physica status solidi C. Vol. 7, (2010), p. 1964-1966 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations ZHANG, Y.H. - LIU, Z.H. - TADJER, M.J. - SUN, M. - PIEDRA, D. - HATEM, C. - ANDERSON, T.J. - LUNA, L.E. - NATH, A. - KOEHLER, A.D. - OKUMURA, H. - HU, J. - ZHANG, X. - GAO, X. - FEIGELSON, B.N. - HOBART, K.D. - PALACIOS, T. In IEEE ELECTRON DEVICE LETTERS. AUG 2017, vol. 38, no. 8, p. 1097-1100. LORENZ, K. Ion Implantation into Nonconventional GaN Structures. In PHYSICS. ISSN 2624-8174, JUN 2022, vol. 4, no. 2, p. 548-564. Dostupné na: https://doi.org/10.3390/physics4020036. Category ADEB - Scientific papers in other foreign journals not registered in Current Contents Connect without IF (non-impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2010 Registered in WOS Registered in SCOPUS DOI 10.1002/pssc.200983534 article
rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore N rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2010 2009 0.428 Q3
Number of the records: 1