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Low- and high-frequency capacitance of aluminum gallium nitride/gallium nitride heterostructures with interface traps

  1. TitleLow- and high-frequency capacitance of aluminum gallium nitride/gallium nitride heterostructures with interface traps
    Author Osvald Jozef 1953 SAVELEK - Elektrotechnický ústav SAV    ORCID
    Co-authors Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV    ORCID

    Kordoš Peter SAVELEK - Elektrotechnický ústav SAV

    Source document Materials science in semiconductor processing. Vol. 31, (2015), p. 525-529
    Languageeng - English
    Document kindrozpis článkov z periodík (rbx)
    CitationsZIANE, A. - AMRANI, M. - BENAMARA, Z. - RABEHI, A. Modeling and Simulation of Capacitance-Voltage Characteristics of a Nitride GaAs Schottky Diode. In JOURNAL OF ELECTRONIC MATERIALS. SEP 2018, vol. 47, no. 9, p. 5283-5290.
    HOSHII, Takuya - NAKAJIMA, Akira - NISHIZAWA, Shin-ichi - OHASHI, Hiromichi - KAKUSHIMA, Kuniyuki - WAKABAYASHI, Hitoshi - TSUTSUI, Kazuo. Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, 2019, vol. 58, no. 6, pp.
    MAO, W. - XU, S.H. - WANG, H.Y. - YANG, C. - ZHAO, S.L. - CHEN, J.B. - ZHANG, Y.C. - ZHANG, C.F. - ZHANG, J.C. - HAO, Y. Effect of oxygen plasma treatment on the performance of recessed AlGaN/GaN Schottky barrier diodes. In APPLIED PHYSICS EXPRESS. ISSN 1882-0778, JAN 1 2022, vol. 15, no. 1. Dostupné na: https://doi.org/10.35848/1882-0786/ac44cb.
    LIN, X.Y. - XIN, Q. - KIM, J. - JIN, J.D. - ZHANG, J.W. - SONG, A.M. High-Performance 1-V IGZO Thin-Film Transistors Gated With Aqueous and Organic Electrolyte-Anodized Alsubx/subOsuby/sub. In IEEE TRANSACTIONS ON ELECTRON DEVICES. ISSN 0018-9383, FEB 2023, vol. 70, no. 2, p. 537-543. Dostupné na: https://doi.org/10.1109/TED.2022.3229286.
    CategoryADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
    Category of document (from 2022)V3 - Vedecký výstup publikačnej činnosti z časopisu
    Type of documentčlánok
    Year2015
    Registered inWOS
    Registered inCCC
    DOI 10.1016/j.mssp.2014.11.052
    article

    article

    rokCCIFIF Q (best)JCR Av Jour IF PercSJRSJR Q (best)CiteScore
    A
    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    201520141.955Q20.554Q2
Number of the records: 1  

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