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3D resistive RAM cell design for high-density storage class memory - a review
Title 3D resistive RAM cell design for high-density storage class memory - a review Author Hudec Boris ORCID Co-authors Hsu C.-W. Wang I-T. Lai W.-L. Chang C.-C. Wang T. Fröhlich Karol 1954 SAVELEK - Elektrotechnický ústav SAV ORCID Ho C.-H. Lin C.-H. Hou T.-H. Source document Science China Information Sciences. Vol. 59 (2016), art. no. 061403 Language eng - English Document kind rozpis článkov z periodík (rbx) Citations AUSSEN, S. - HARDTDEGEN, A. - SKAJA, K. - HOFFMANN-EIFERT, S. In ATOMIC LAYER DEPOSITION APPLICATIONS 13. 2017, vol. 80, no. 3, p. 87-95. ZHU, D.B. - LI, Y. - SHEN, W.S. - ZHOU, Z. - LIU, L.F. - ZHANG, X. In JOURNAL OF SEMICONDUCTORS. JUL 2017, vol. 38, no. 7. ZHANG, J.Y. - GUO, M.Y. - WU, C.T. - CHEN, Y.Y. Toward multi-programmed workloads with different memory footprints: a self-adaptive last level cache scheduling scheme. In SCIENCE CHINA-INFORMATION SCIENCES. JAN 2018, vol. 61, no. 1. PARVEEN, F. - HE, Z.Z. - ANGIZI, S. - FAN, D.L. 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Dostupné na: https://doi.org/10.1109/LED.2023.3235909. Category ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted) Category of document (from 2022) V3 - Vedecký výstup publikačnej činnosti z časopisu Type of document článok Year 2016 Registered in WOS Registered in SCOPUS Registered in CCC DOI 10.1007/s11432-016-5566-0 
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File name Access Size Downloaded Type License 3D resistive RAM cell design for high-density storage class memory - a review.pdf Neprístupný/archív 3.8 MB 2 Publisher's version rok CC IF IF Q (best) JCR Av Jour IF Perc SJR SJR Q (best) CiteScore A rok vydania rok metriky IF IF Q (best) SJR SJR Q (best) 2016 2015 0.885 Q3 0.357 Q2
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