Analysis and modeling of vertical current conduction and breakdown mechanisms in semi-insulating GaN grown on GaN: role of deep levels

Number of the records: 1

Title	Analysis and modeling of vertical current conduction and breakdown mechanisms in semi-insulating GaN grown on GaN: role of deep levels
Author	Stoklas Roman 1981 SAVELEK - Elektrotechnický ústav SAV ^ORCID
Co-authors	Chvála A.
	Šichman Peter SAVELEK - Elektrotechnický ústav SAV
	Hasenöhrl Stanislav 1956 SAVELEK - Elektrotechnický ústav SAV ^ORCID
	Haščík Štefan 1956 SAVELEK - Elektrotechnický ústav SAV
	Priesol J.
	Šatka A.
	Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV ^ORCID

Source document	IEEE Transactions on Electron Devices. Vol. 68 (2021), no. 2365
Language	eng - English
Document kind	rozpis článkov z periodík (rbx)
Citations	KIM, H. Vertical Schottky Contacts to Bulk GaN Single Crystals and Current Transport Mechanisms: A Review. In JOURNAL OF ELECTRONIC MATERIALS. ISSN 0361-5235, DEC 2021, vol. 50, no. 12, SI, p. 6688-6707.
Category	ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	2021
Registered in	WOS
Registered in	SCOPUS
Registered in	CCC
DOI	10.1109/TED.2021.3065893

article

	File name	Access	Size	Downloaded	Type	License
	Analysis and Modeling of Vertical Current.pdf	Neprístupný/archív	1.3 MB	1	Publisher's version

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	A

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2021	2020	2.917	Q2	0.828	Q1

Number of the records: 1