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á-SiC growth on Si by reactive-ion molecular beam epitaxy

  1. Titleá-SiC growth on Si by reactive-ion molecular beam epitaxy
    Author Kuzmík Ján 1960 SAVELEK - Elektrotechnický ústav SAV    ORCID
    Source document The Workshop on Solid State Surfaces and Interfaces II : June 20-22, 2000. P. 56 / Brunner Róbert 1954. - Bratislava : FU SAV, 2000
    Languageeng - English
    CountrySK - Slovak Republic
    Document kindrozpis článkov z periodík (rzb)
    CategoryAED - Scientific papers in domestic peer-reviewed proceedings, monographs
    Category of document (from 2022)V2 - Vedecký výstup publikačnej činnosti ako časť editovanej knihy alebo zborníka
    Type of documentpríspevok
    Year2000
    article

    article

    rok vydaniarok metrikyIFIF Q (best)SJRSJR Q (best)
    2000
Number of the records: 1  

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