A simulation model for chemically amplified resist CAMP6

Number of the records: 1

Title	A simulation model for chemically amplified resist CAMP6
Author	Vutova Katia
Co-authors	Koleva Elena
	Mladenov Georgy
	Kostič Ivan 1955- SAVINFO - Ústav informatiky SAV ^SCOPUS ^RID ^ORCID
	Tanaka T.
	Kawabata Keishi

Source document	Microelectronic Engineering : an international journal of semiconductor manufacturing technology. Vol. 86, (2009) p. 714-717
Language	eng - English
Country	NL - Netherlands
Document kind	rozpis článkov z periodík (rbx)
Citations	ZHANG, Hui - KOMORI, Takuya - ZHANG, Yulong - YIN, You - HOSAKA, Sumio. Simulation of Fine Resist Profile Formation by Electron Beam Drawing and Development with Solubility Rate Based on Energy Deposition Distribution. In JAPANESE JOURNAL OF APPLIED PHYSICS. ISSN 0021-4922, 2013, vol. 52, no. 12, pp.
Category	ADCA - Scientific papers in foreign journals registered in Current Contents Connect with IF (impacted)
Category of document (from 2022)	V3 - Vedecký výstup publikačnej činnosti z časopisu
Type of document	článok
Year	2009
Registered in	WOS
Registered in	SCOPUS
Registered in	CCC
DOI	10.1016/j.mee.2008.11.010

article

rok	CC	IF	IF Q (best)	JCR Av Jour IF Perc	SJR	SJR Q (best)	CiteScore
	A

rok vydania	rok metriky	IF	IF Q (best)	SJR	SJR Q (best)
2009	2008	1.583	Q2	1.027	Q1

Number of the records: 1